Abstract:Purpose
The purpose of this paper is to develop a model that allows determining the boron concentration profile in silicon based on duration and temperature of the diffusion process.
Design/methodology/approach
The model was developed on the basis of the Fick’s second law, which is fundamental for describing the diffusion process. The explicit scheme of the finite difference method was used in the conducted simulations. Results of measurements made using the secondary ion mass spectrometry (SIMS) were used a… Show more
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