Model for random telegraph signals in sub-micron MOSFETS

Amarasinghe, Nuditha Vibhavie; Çelik‐Butler, Zeynep; Zlotnicka, A.; Wang, F.

doi:10.1016/s0038-1101(03)00100-x

Cited by 23 publications

(23 citation statements)

References 22 publications

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“…The small operating drain bias (∼ 0.1V), relates the gate capacitive factor α g directly to an effective trap depth d t under the oxide surface. The relationship is linear in the oxide for a regular MOSFET with planar geometry, d t ≈ α g t ox , t ox denoting the thickness of the oxide layer [25,26]. Because of the cylindrical structure of the carbon nanotube FET the potential profile across the oxide varies logarithmically with distance from the center of the conductor.…”

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confidence: 99%

Reversal of current blockade in nanotube-based field effect transistors through multiple trap correlations

et al. 2009

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Current noise in electronic devices usually arises from uncorrelated charging events, with discrete transitions resolved only at low temperatures. However, in nanotube-based field effect transistors ͑FETs͒, we have observed random telegraph signal ͑RTS͒ with unprecedented amplitude at room temperature. This RTS is characteristically truncated, suggesting that the current blockade induced by one trap fully reverses through electrostatic interaction with another. These observations have motivated us to develop a robust quantum transport model that reveals how the fast varying, logarithmic gate potential along a one-dimensional channel makes it possible to detect correlated transitions arising from multiple charge traps. These results suggest applications including adsorbate detection and spectroscopy and the development of strategies to passivate traps and mitigate current noise in FETs.

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confidence: 99%

Reversal of current blockade in nanotube-based field effect transistors through multiple trap correlations

et al. 2009

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“…3b − at 12%. RTS is well-known in submicron silicon MOSFETs [12,13] and also other similar devices. In those structures, however, RTS is primarily caused by deep-level traps located near an Si/SiO2 interface.…”

Section: I−v Characteristics In Forward and Reverse Bias At Low Tempementioning

confidence: 99%

Dopant-Based Charge Sensing Utilizing P-I-N Nanojunction

Nowak

Jabłoński

2017

Metrology and Measurement Systems

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We studied lateral silicon p-i-n junctions, doped with phosphorus and boron, regarding charge sensing feasibility. In order to examine the detection capabilities and underlying mechanism, we used in a complementary way two measurement techniques. First, we employed a semiconductor parameter analyzer to measure I−V characteristics at a low temperature, for reverse and forward bias conditions. In both regimes, we systematically detected Random Telegraph Signal. Secondly, using a Low Temperature Kelvin Probe Force Microscope, we measured surface electronic potentials. Both p-i-n junction interfaces, p-i and i-n, were observed as regions of a dynamic behaviour, with characteristic time-dependent electronic potential fluctuations. Those fluctuations are due to single charge capture/emission events. We found analytically that the obtained data could be explained by a model of twodimensional p-n junction and phosphorus-boron interaction at the edge of depletion region. The results of complementary measurements and analysis presented in this research, supported also by the previous reports, provide fundamental insight into the charge sensing mechanism utilizing emergence of individual dopants.

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“…Then, the trap position is computed along the channel from the source utilizing the reverse mode measurements: [2,5,7]. …”

Section: Measurement Setupmentioning

confidence: 99%

Variability of random telegraph noise in analog MOS transistors

Nour

Mahmud

Çelik‐Butler

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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Random telegraph signals (RTS) are investigated onMOSFETs where a systematic procedure is developed to extract the RTS parameters from a large volume of multi-level switching events with a Poisson distribution. RTS measurements can be utilized to identify and characterize gate oxide defects with better resolution than frequency domain power spectral density, deep level transient spectroscopy, or charge pumping techniques. We demonstrate here multi-level RTS method to investigate gate dielectric trap characteristics including type (acceptor or donor), position of the traps from the of Si/SiO 2 interface in the oxide, and along the channel, using the effect of gate bias on the mean carrier capture and emission times, and the number of active traps.

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Model for random telegraph signals in sub-micron MOSFETS

Cited by 23 publications

References 22 publications

Reversal of current blockade in nanotube-based field effect transistors through multiple trap correlations

Reversal of current blockade in nanotube-based field effect transistors through multiple trap correlations

Dopant-Based Charge Sensing Utilizing P-I-N Nanojunction

Variability of random telegraph noise in analog MOS transistors

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