We study a microscopic model for a disordered superlattice system, which simulates the effect of intrinsic alloy fluctuation on localization in alloy superlattices. Numerical investigation of scaling behavior of the localization length shows that excitations along and perpendicular to the superlattice axis undergo a localization transition at a nonzero critical disorder. Therefore, we contend that for localization, the alloy superlattices should be viewed as a 3-dimensional anisotropic material. At the transition, the localization length diverges with critical exponent v = 1.2 t 0.2. We expect that the model belongs to the same universality class as the 3 dimensional isotropic Anderson model. 0 1997 Elsevier Science Ltd. All rights reserved Recently, much attention [l-6] has been paid to the study of the localization transition in anisotropic materials. It seems now that there is general agreement that the critical disorder at which the localization transition takes place and the critical exponent of the localization length are independent of the direction of measurement in spite of the anisotropy.On the other hand, a careful study by way of a fully 3-dimensional (3D) model is necessary for disordered superlattice (SL) system, where most theoretical studies [7] are based upon l-dimensional (1D) models. In an ideal SL, i.e. no disorder present, the excitation along the SL axis is decoupled from those in other directions so that it is essentially described by 1D equations of motion. Almost all electronic and vibrational excitations are known to be localized in 1D space at any nonzero disorder [8,9]. Since a certain degree of disorder is always present in real SLs, localization of any excitation is inevitable in the 1D pictures of SL. However, on the experimental side, it has been shown [lo] that Bloch transport along the SL axis can take place for relatively small alloy concentration. Moreover, it has been shown [ 1 l] that there exists a confined-to-propagating transition of GaAs optical phonons and low energy electronic excitations in GaAs/Al,Gai_,As SL as the alloy concentration x is varied. These experimental findings cast doubt on the 1D pictures of SL in the presence of disorder and suggest that for localization disordered SLs should be considered as a 3D anisotropic material. The impurities in real SL cannot be taken into account fully within 1D models since disorder effects arise not only from randomness along the SL axis but also from the fact that impurities exist in the form of the in-plane (parallel to the SL layers) randomness. In the presence of 3-dimensional (3D) disorder, the three spatial components of an excitation are coupled with one another and the equations of motion do not reduce to 1D ones. A more interesting but rarely investigated case involving the in-plane randomness is the alloy SLs, e.g. GaAs/Al,Gal_,As.A disorder normally considered in the GaAs/Al,Gat_,As system is the well-width fluctuation, which is dealt with in 1D picture. The intrinsic alloy disorder cannot be properly treated ...