2011
DOI: 10.1143/jjap.50.08je04
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Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching

Abstract: We study the ADHM construction of instantons in N = 2 supersymmetric Yang-Mills theory deformed in constant Ramond-Ramond (R-R) 3-form field strength background in type IIB superstrings. We compare the deformed instanton effective action with the effective action of fractional D3/D(−1) branes at the orbifold singularity of C 2 /Z 2 in the same R-R background. We find discrepancy between them at the second order in deformation parameters, which comes from the coupling of the translational zero modes of the D(−1… Show more

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