Model calculations for nitrogen-bound excitons in GaP

Wünsche, H.‐J.; Thuselt, Frank; Unger, K.

doi:10.1016/0022-2313(81)90313-6

Cited by 5 publications

(5 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4) must be considered. In contrast to previous calculations of Wiinsche et al [9] we found for GaP that both electrons are localized a t the N impurity, forming a twofold charged centre. The holes are bound in an effective mass like shell (double-acceptor (DA) like structure).…”

Section: )contrasting

confidence: 81%

See 1 more Smart Citation

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs_1−xP_x:N

Müller¹,

Wünsche²

1984

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

A calculation of several properties of excitons and excitonic molecules bound to the isolated nitrogen impurity in GaAs1 -,P, is presented. For the first time the short-range nature of the impurity potential, the multivalley-structure of the conduction band as well as the mutual particle-particle interactions are taken into account. A specific formulation of the density-functional formalism which is briefly outlined is used for calculating binding energies and spatial structure of these complexes. Influence of disorder is neglected but will be studied in a forthcoming paper. The results support the tentative interpretation of the Nr-x-line as originating from excitonic molecule recombination bound to N isoelectronic trap. Es werden einige Eigenschaften von Exzitonen und Exzitonenmolekiilen, die an isolierten

show abstract

Section: )contrasting

confidence: 81%

“…As Fig. 3 shows, the BE consists of a strong localized electron in a Koster-Slater like wave function and a hole, whose density is similar to that of a neutral acceptor (A") [9]. This is in accordance with the HTL model.…”

Section: Exciton ( B E )supporting

confidence: 74%

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs_1−xP_x:N

Müller¹,

Wünsche²

1984

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, [ 2 , 3 1 took into account the band structure effects together with the Coulomb interaction of both particles. [4,51. In this connection we described the hole and also the electron in the effective mass approximation.…”

Section: (1)mentioning

confidence: 99%

“…The hole mass m,, = 0.45mn is taken from [4] too. A one-valley calculation yields for the sulfur donor [lo] the value of 107 meV known from experiment with the mass m, and the static dielectric constant F~ = 11.19 [9].…”

Section: (1)mentioning

confidence: 99%

“…The self-consistent, coupled Kohn-Sham equations without correction of the self-interaction contributions are and Equation (2) describes the motion of the electron and (3) that of the hole. The particle densities nn(r) (1 = e, h) are related to the orbital functions y~( r ) via %(*') = nl, lp'n(r)12 Y (4) n,! is the occupation number.…”

Section: Bound Excitons and Multiexcitonsmentioning

confidence: 99%

See 1 more Smart Citation

Nitrogen Bound Electrons, Excitons, and Multiexcitons in GaP

Haufe

1987

Physica Status Solidi (b)

View full text Add to dashboard Cite

By means of a simple effective mass model the dcnsity functional theory is used to calculate the ground state energy of the exciton a t the isolate N impurity. For this purpose, the N potential is adjusted and provides the value known from experiment. This potential offers the basis for tho computations of the bound multiexciton complexes a t the isolated N impurity and of the electron binding energy a t the N pairs. The results so obtained arc in good qualitative agreement with the experimental ones.I n einem einfachen Effektivmassenmodell wird mittels Dichtefunktionaltheorie die Grundzustandsenergie des Exzitons an der isolierten Stickstoffstorstelle berechnet. Zu diesem Zweck erfolgt eine Anpassung des Stickstoffpotentials, die den experimentell bekannten Wert liefert. Dieses Potential bietet die Grundlage fur die Berechnung der gebundenen Vielexzitonenkomplexe a n der isolierten Stickstoffstorstelle und der Bindungsenergie des Elektrons an den Stickstoffpaaren. Die so gewonnenen Ergebnisse befinden sich in guter qualitativer obereinstimmung mit den cxperimentellen Resultaten.

show abstract

Investigation of the Recombination Mechanism in GaAS0.11P0.89: N

Stegmann

Oelgart

Saueer

et al. 1984

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

The recombination mechanism is investigated in GaAs0.11P0.89:N. A recombination model is used to describe the luminescence intensity in dependence on the temperature between 80 and 300 K, on the concentration of different donors, on the excitation level, and on the influence of nonradiative recombination processes for n‐ and p‐type material. The agreement between model calculations and experimental data allows to determine the ionization energies of the nitrogen bound exciton and the donors (Te, S). The binding energy of the exciton (with respect to the band gap) is (66 ± 3) and (33 ± 3) meV of the electron isoelectronically bound to the nitrogen atom. The correspondence of theoretically and experimentally obtained data supports the assumption that the hole is bound by Coulomb interaction after trapping the electron to the N‐centre.

show abstract

Model calculations for nitrogen-bound excitons in GaP

Cited by 5 publications

References 5 publications

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs_1−xP_x:N

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs_1−xP_x:N

Nitrogen Bound Electrons, Excitons, and Multiexcitons in GaP

Investigation of the Recombination Mechanism in GaAS0.11P0.89: N

Contact Info

Product

Resources

About

Model calculations for nitrogen-bound excitons in GaP

Cited by 5 publications

References 5 publications

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:N

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:N

Nitrogen Bound Electrons, Excitons, and Multiexcitons in GaP

Investigation of the Recombination Mechanism in GaAS0.11P0.89: N

Contact Info

Product

Resources

About

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs_1−xP_x:N

Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs_1−xP_x:N