Model and Verification of a Plasma Etching Reactor with a Switched-Mode Power Converter

Abstract

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Auto-Tuning Control of a Switched-Mode Power Converter for Tailored Pulse-Shape Biased Plasma Etching Applications

“…Fig. 3 depicts the equivalent electric circuit (EEC) model of the plasma reactor, which is a simplification of the plasma reactor model introduced in [19]. The substrate wafer is placed on the conductive table and the table is connected to the power converter.…”

“…R p is the equivalent plasma resistor. More details on the plasma sheath and the derivation of the EEC model can be found in [19]. Since they are not the focus of this paper, they are skipped here for brevity.…”

“…Since C sub is typically much larger than C sh1 [19], u sh1 can be approximate by V s . Once the etching starts, the bias voltage should linearly decrease with the desired voltage slope rate.…”

“…To derive the auto-tuning control method, the circuit system generalized by (4) can be further manipulated for simplification. Normally, the value of C sh2 and I i2 are relatively small and can be neglected [19]. Therefore, a simplified description of the system can be given by By varying the voltage slope, the dc current changes accordingly.…”

Equivalent electric circuit model of accurate ion energy control with tailored waveform biasing

“…These models cannot be directly used for transient analysis in tailored waveform biasing because the discharge process is not accurately included. In [42], a modified model is proposed, which emulates the discharge process by a virtual sheath reset circuit. While this modified model can roughly represent the charge and discharge processes, and thus can be used for electric circuit simulation, it significantly increases the complexity of the circuit.…”