Mode size and method for estimating the propagation constant of single-mode Ti:LiNbO&amp;lt;inf&amp;gt;3&amp;lt;/inf&amp;gt;strip waveguides

Korotky, S.K.; Minford, W. J.; Buhl, L. L.; Divino, M. D.; Alferness, R. C.

doi:10.1109/jqe.1982.1071422

Cited by 73 publications

(14 citation statements)

References 15 publications

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“…The 8.0-pm FWHM of the near field as determined by the video analyzer data is in good agreement with the far-field measurement. The fact that the 20-pm horn aperture is not fully filled is consistent with theory 20 that relates the spatial size of the fundamental mode to width-to-depth ratio of a waveguide. For the large ratio in our case (-,9), the underfilling of the aperture is expected.…”

Section: Design Fabrication and Characterization Of Horn Antennas Isupporting

confidence: 82%

See 1 more Smart Citation

Solid State Research.

McWhorter¹

1984

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Pap 3-1 Subthreshold Characteristics of n-and p-Channel SOI/ MOSFETs Before and After Irradiation. Bias Voltages During Irradiation Are Shown. 30 3-2 Threshold Voltage Shifts for nand p-Channel Devices as a Function of Ionizing Dose. Bias Voltages During Irradiation Are Shown. 3-3 Transistor Characteristics for n-Channel MOSFETs (a) Before and (b) After Irradiation to a Dose of 107 rad(Si). Bias Voltages During Irradiation Were VG = 3 V and VD = 0 V. 3-4 Schematic Diagrams of Vertical Bipolar Transistors. (a) SOI Device, (b) Bulk Device. 3-5 Common-Emitter I-V Characteristics of Vertical Bipolar Transistors. (a) SOI Device, (b) Bulk Device. 3-6 Schematic Illustration of the MOS Double-Heterostructure Diode Laser Showing One of the Etched Facets 3-7 Power Emitted from One Facet of an MGS Diode Laser as a Function of Pulsed Bias Current at 77 K. The 0.7 Percent Quantum Efficiency Was Calculated Assuming Equal Power Emission from Both Facets. 3-8 Spectral Emission from the Lowest Threshold MOS Diode Laser at 77 K, Exhibiting (a) Nearly Single Mode Oscillation at 1.1 6o, and (b) Spontaneous Emission at 0.9 Ith 3-9 Stained Cross Section of GaAs 1 xP x Step-Graded Solar Cell Structure 3-10 Surface Morphology of GaAs 0. 7 5 P 0 .2. Layers Without Step Grading (Left) and with Two-Step Compositional Grading (Right) 3-11 Schematic Cross Section of Step-Graded GaAso. 7 5P.25 Shallow-Homojunction Solar Cell 3-12 Current Density as a Function of Voltage for GaAso. 75 Po.2 Solar Cell Under Simulated AMI, One-Sun Conditions 3-13 External Quantum Efficiency as a Function of Wavelength for a GaAs 0. 75 Po. 2 5 Cell 4-1 Self-Aligned Dual-Grating GaAs Permeable-Base Transistor Fabrication Sequence I I 4-2 SEM Cleaved Cross-Section Micrographs of a Dual-Grating PBT: (a) High Magnification and (b) Low Magnification ix 4 iN No. Page 4-3 (a) The Generic Dual-Grating PBT Structure; (b) and (c) Two Potential Integration Schemes 52

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Section: Design Fabrication and Characterization Of Horn Antennas Isupporting

confidence: 82%

“…18 cells have previously been fabricated on GaAs substrates by low-pressure organometallic chemical vapor deposition (OMCVD). 20 The GaAs0.o2Po.18 active region was grown directly on the GaAs substrate without any intermediate layers of graded alloy composition. The efficiency at 7.4 suns was 14.8 percent at AM2, but no one-sun results were given.…”

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confidence: 99%

Solid State Research.

McWhorter¹

1984

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“…In most cases, however, much simpler almost analytical methods (e.g. Gauss-Hermite-Gauss approximation [41] or effective-index-methods [44]), provide sufficiently good results for a quantitative evaluation.…”

Section: Photon Pair Sourcesmentioning

confidence: 99%

Toolbox for the design of LiNbO₃-based passive and active integrated quantum circuits

et al. 2017

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We present and discuss perspectives of current developments on advanced quantum optical circuits monolithically integrated in the lithium niobate platform. A set of basic components comprising photon pair sources based on parametric down conversion (PDC), passive routing elements and active electro-optically controllable switches and polarisation converters are building blocks of a toolbox which is the basis for a broad range of diverse quantum circuits. We review the state-of-the-art of these components and provide models that properly describe their performance in quantum circuits. As an example for applications of these models we discuss design issues for a circuit providing on-chip twophoton interference. The circuit comprises a PDC section for photon pair generation followed by an actively controllable modified mach-Zehnder structure for observing Hong-Ou-Mandel interference. The performance of such a chip is simulated theoretically by taking even imperfections of the properties of the individual components into account.

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“…The variational analysis of Ti:LiNbO 3 waveguides provides an eå ective approach in determining simultaneously the mode sizes and the eå ective refractive index [12]. In addition, this method has the advantages of speediness, simplicity and high accuracy.…”

Section: Theoretical Description 21 Variational Analysismentioning

confidence: 99%

Fabrication parameters optimization of Ti-diffused N:LiNbO 3 channel waveguide lasers

Zhang¹,

Ding²,

Chen³

2000

Journal of Modern Optics

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The variations of lower-order TM mode size and corresponding eå ective refractive index, eå ective pump area and coupling eae ciency between pump and laser modes with the controllable fabrication parameters, i.e. initial Ti-strip width W, diå usion temperature T and initial Ti-strip thickness H in ccut Ti-diå used Nd:LiNbO 3 waveguide lasers have been calculated by using a variational method, taking into account both laser wavelength, 1085 nm, and pump wavelength, 815 nm. The main features of these curves were summarized and discussed in detail; consequently, the single-mode, fundamental mode cutoå and multimode conditions were presented and compared with the published experimental data. The eå ective pump area, directly proportional to threshold pump power, reveals a weak dependence on W in the considered range 4± 16 mm and strong dependences on T and H in, respectively, the ranges studied 950± 1100 8 C and 40± 160 nm, while the coupling eae ciency, directly proportional to slope eae ciency, is hardly changed (with the values 0.82± 0.85) with these parameters. Finally, appropriate diå usion parameters were proposed for the fabrication of a more eae cient laser. IntroductionNd:LiNbO 3 has been extensively studied as a promising solid laser material which combines the excellent laser properties of Nd 3 ‡ with the electro-optic, acousto-optic and nonlinear optical properties of LiNbO 3 . The doping of MgO and pumping at the near-infrared wavelength (815 nm) have practically eliminated photorefractive damage even in the case of high pumping intensity. In a waveguide con® guration this combination could lead to highly eae cient laser diode pumped lasers and ampli® ers, self-frequency-doubled, self Q-switched lasers, etc. Recently, continuous-wave (CW) operation annealed proton exchange (APE) Nd:MgO:LiNbO 3 [1± 5], Ti-diå used Nd:MgO:LiNbO 3 [6] and Nd:LiNbO 3 [7] channel waveguide lasers and integrated devices, including FM mode-locked [8], Q-switched [9] and pulsed [10] waveguide lasers, have been successfully demonstrated. The optimization of the laser eae ciency of Ti-diå used Nd:LiNbO 3 waveguide lasers requires knowledge of the dependence of mode size and the corresponding eå ective refractive index, optical loss, threshold pump power and slope eae ciency on controllable waveguide fabrication parameters. From these dependences the waveguide fabrication parameters can be optimized. The variation of the optical loss with diå usion temperature at 1.15 mm has been investigated

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Mode size and method for estimating the propagation constant of single-mode Ti:LiNbO<inf>3</inf>strip waveguides

Cited by 73 publications

References 15 publications

Solid State Research.

Solid State Research.

Toolbox for the design of LiNbO₃-based passive and active integrated quantum circuits

Fabrication parameters optimization of Ti-diffused N:LiNbO 3 channel waveguide lasers

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Mode size and method for estimating the propagation constant of single-mode Ti:LiNbO&lt;inf&gt;3&lt;/inf&gt;strip waveguides

Cited by 73 publications

References 15 publications

Solid State Research.

Solid State Research.

Toolbox for the design of LiNbO3-based passive and active integrated quantum circuits

Fabrication parameters optimization of Ti-diffused N:LiNbO 3 channel waveguide lasers

Contact Info

Product

Resources

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Mode size and method for estimating the propagation constant of single-mode Ti:LiNbO<inf>3</inf>strip waveguides

Toolbox for the design of LiNbO₃-based passive and active integrated quantum circuits