Mode of arsenic incorporation in HgCdTe grown by MBE

Sivananthan, S.; Wijewarnasuriya, P. S.; Aqariden, F.; Vydyanath, H. R.; Zandian, Majid; Edwall, D. D.; Arias, J. M.

doi:10.1007/s11664-997-0205-6

Cited by 42 publications

(25 citation statements)

References 22 publications

(4 reference statements)

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“…12 It is well established that post-growth annealing is an effective way to activate As to acceptors by transferring As atoms to Te sublattices. 26,27 In order to find the lowest annealing temperature necessary for activation and to understand the effect of Hg on the process, post-growth annealing was carried out at different partial pressures of Hg and at different temperatures. The partial pressure of Hg was controlled by the Hg temperature by using a dualtemperature-zone closed quartz ampule.…”

Section: Arsenic Incorporationmentioning

confidence: 99%

MBE HgCdTe on Alternative Substrates for FPA Applications

Quan

et al. 2008

Journal of Elec Materi

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Results of first-principles calculations and experiments focusing on molecular beam epitaxy (MBE) growth of HgCdTe on the alternative substrates of GaAs and Si are described. The As passivation on (2 · 1) reconstructed (211) Si and its effects on the surface polarity of ZnTe or CdTe were clarified by examining the bonding configurations of As. The quality of HgCdTe grown on Si was confirmed to be similar to that grown on GaAs. Typical surface defects in HgCdTe and CdTe were classified. Good results for uniformities of full width at half maximum (FWHM) values of x-ray rocking curves, surface defects, and x values of Hg 1-x Cd x Te were obtained by refining the demanding parameters and possible tradeoffs. The sticking coefficient of As 4 for MBE HgCdTe was determined. The effects of Hg-assisted annealing for As activation were investigated experimentally and theoretically by examining the difference of the formation energy of As Hg and As Te . Results of focal-plane arrays (FPAs) fabricated with HgCdTe grown on Si and on GaAs are discussed.

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Section: Arsenic Incorporationmentioning

confidence: 99%

MBE HgCdTe on Alternative Substrates for FPA Applications

Quan

et al. 2008

Journal of Elec Materi

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“…Up to $10 18 cm -3 , 100% activation of the arsenic can be achieved by an anneal at 400°C to 500°C followed by a vacancy-filling anneal at 250°C, both under Hg saturated conditions. 9 As-grown layers are n-type with n $ 1% of the As concentration. 2,10,11 Again, this approximates to the annealed carrier concentration for undoped MBE material indicating that the As is inactive.…”

Section: Literature Review Of Arsenic Doping In Mctmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

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“…Control of substrate temperature, in particular, has been a significant issue with respect to control of p-type doping due to the sensitivity of As incorporation to substrate temperature. 2,28 The electrical activity of As has been shown to diminish at concentrations above approximately 2 x 10 18 cm -3 . Excessive As doping at 10 20 cm -3 has also been shown to have a deleterious effect on dislocation density in the p-layer and topmost N -layer of N-p-n devices.…”

Section: Multispectral Detectorsmentioning

confidence: 99%

Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Lyon

Rajavel

Roth

et al. 2001

Materials for Infrared Detectors

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Since its initial synthesis and investigation more than 40 years ago, the HgCdTe alloy semiconductor system has evolved into one of the primary infrared detector materials for high-performance infrared focal-plane arrays (FPA) designed to operate in the 3-5 µm and 8-12 µm spectral ranges of importance for thermal imaging systems. Over the course of the past decade, significant advances have been made in the development of thin-film epitaxial growth techniques, such as molecular-beam epitaxy (MBE), which have enabled the synthesis of IR detector device structures with complex doping and composition profiles. The central role played by in situ sensors for monitoring and control of the MBE growth process are reviewed. The development of MBE HgCdTe growth technology is discussed in three particular device applications: avalanche photodiodes for 1.55 µm photodetection, megapixel FPAs on Si substrates, and multispectral IR detectors.

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Mode of arsenic incorporation in HgCdTe grown by MBE

Cited by 42 publications

References 22 publications

MBE HgCdTe on Alternative Substrates for FPA Applications

MBE HgCdTe on Alternative Substrates for FPA Applications

As Doping in (Hg,Cd)Te: An Alternative Point of View

Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

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