2022
DOI: 10.1002/lpor.202270001
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Mode and Polarization‐Division Multiplexing Based on Silicon Nitride Loaded Lithium Niobate on Insulator Platform (Laser Photonics Rev. 16(1)/2022)

Abstract: (De)Multiplexing Technologies In article number 2100529, Yonghui Tian, Arnan Mitchell, Yikai Su, and co‐workers experimentally demonstrated mode and polarization‐division multiplexing on a thin‐film lithium niobate on insulator (LNOI) platform. By introducing silicon nitride as a loading material atop the LNOI photonics chip, the devices can be integrated with high‐speed electro‐optic modulators to achieve high‐capacity and low‐cost photonic integrated circuits suitable for data communication applications, whi… Show more

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Cited by 17 publications
(23 citation statements)
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“…Ta 2 O 5 , Si 3 N 4 , and LiNbO 3 have been widely used in integrated photonics for their CMOS compatibility, low loss, and high nonlinear effect. [ 70–74 ] Compared to silicon, these materials have lower refractive indexes, so the strong interaction between the waveguide modes and the metasurfaces can ensure the efficient mode and polarization conversion process. Please note that our proposed method could be potentially applied to the silicon platform with modified parameters including the size and the period of the C‐shaped nanoantennas.…”
Section: Resultsmentioning
confidence: 99%
“…Ta 2 O 5 , Si 3 N 4 , and LiNbO 3 have been widely used in integrated photonics for their CMOS compatibility, low loss, and high nonlinear effect. [ 70–74 ] Compared to silicon, these materials have lower refractive indexes, so the strong interaction between the waveguide modes and the metasurfaces can ensure the efficient mode and polarization conversion process. Please note that our proposed method could be potentially applied to the silicon platform with modified parameters including the size and the period of the C‐shaped nanoantennas.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, the width of the SWG is chosen to be w 5 = 1.8 μm for low loss propagation of TM 0 mode as well as a large effective index difference between TE 0 and TM 0 modes, which is also far away from the mode hybridization width (2.1 μm). [ 23 ] According to the results, the grating pitch is chosen to be Λ 3 = 422 nm in this work, for a central wavelength around 1550 nm. Figure 3c shows the simulated transmission of TE 0 and TM 0 modes as a function of grating period number is simulated at a wavelength of 1550 nm.…”
Section: Principle and Designmentioning
confidence: 99%
“…The device is designed along the crystallographic Z direction on a X‐cut LNOI platform with a 300‐nm‐thick lithium niobate thin film on top of a 4.7‐μm‐thick buried oxide layer, following our previous work. [ 23 ] The birefringence of lithium niobate is considered in the design, which means the crystallographic Z direction has an extraordinary refractive index ( n e ) of ≈2.14, the crystallographic Y/X directions have an ordinary refractive index ( n o ) of ≈2.21, at a wavelength of 1550 nm. The SWG structure is designed on a silicon nitride thin film on the surface of the LNOI platform, whose thickness is chosen to be 300 nm as well, for a strong mode confinement in the hybrid waveguide and a considerable mode confinement factor in the lithium niobate slab.…”
Section: Principle and Designmentioning
confidence: 99%
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“…[ 12,35,37 ] The other one is the photonic waveguide formed on LNOI by loading a strip made of another material (such as silicon nitride) thus avoiding the hard etching process. [ 38,39 ] For these two types of LNOI photonic waveguides, there might occur some mode hybridness due to vertical asymmetry as well as material anisotropy. [ 38–40 ] As a result, the design of multimode LN photonic devices has to be very careful (different from silicon photonics), and lots of efforts have been made in recent years.…”
Section: Introductionmentioning
confidence: 99%