2007
DOI: 10.1049/iet-opt:20060102
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Mode and polarisation control in VCSELs using shallow surface structures

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Cited by 5 publications
(5 citation statements)
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“…The oxide aperture layer is an aluminum rich AlGaAs layer which is selectively oxidized. 5 The half-VCSEL has a non-resonant design 12 where the optical field has its minimum (node) at the semiconductor-air interface. Additionally the semiconductor-air interface can be covered with a λ/4-thick SiN xcoating to increase the nominal reflectivity from the interface and thus reduce the required threshold gain.…”
Section: Half-vcselmentioning
confidence: 99%
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“…The oxide aperture layer is an aluminum rich AlGaAs layer which is selectively oxidized. 5 The half-VCSEL has a non-resonant design 12 where the optical field has its minimum (node) at the semiconductor-air interface. Additionally the semiconductor-air interface can be covered with a λ/4-thick SiN xcoating to increase the nominal reflectivity from the interface and thus reduce the required threshold gain.…”
Section: Half-vcselmentioning
confidence: 99%
“…All these techniques have their advantages and disadvantages. 5 In the device presented here, a half-symmetric resonator, achieved by a curved membrane, in combination with an oxide aperture supports the fundamental mode (Gaussian beam) of the VCSEL and makes the single transversal mode operation of the device possible. This plane concave resonator makes it possible to fit the beam waist of the fundamental mode (by changing the air-gap and the radius of curvature (RoC)) into the oxide aperture and thus be able to use an larger oxide aperture.…”
Section: Introductionmentioning
confidence: 99%
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