MOCVD of iron with [(arene)(diene)Fe(0)] precursors in a fluidized bed reactor

Synthesis, structure, electrochemistry, and Mössbauer effect studies of (ring)Fe complexes (ring=Cp, Cp∗, and C6H7). Photochemical replacement of benzene in the cyclohexadienyl complex [(η5-C6H7)Fe(η-C6H6)]+

“…Finally, it is noted that the electrochemical deposition of organo-iron compounds can be regarded as a very cheap and easy alternative of MOCVD for the handling of highly dispersed iron supported catalysts, which are widely used in industrial applications [20]. Table 2 Formal electrode potentials (V, vs. SCE), peak-current ratios, and peak-to-peak separations (mV) for the redox processes exhibited by the complexes under study in different solvents and at different temperatures (°C)…”

Fabrication and characterization of iron and iron carbide thin films by plasma enhanced pulsed chemical vapor deposition

“…However, the selection of a suitable iron precursor is crucial to achieve high quality iron films in CVD processes. Over the past year, a wide range of iron precursors have been studied, including iron pentacarbonyl (Fe(CO) 5 ) [22][23][24], ferrocene (FeCp 2 ) [16,24], bis (μ-carbonyl-carbonyl-η-cyclopentadienyl)iron (Fe 2 Cp 2 (CO) 4 ) [25], iron tri(bismethylsilyl)amid (Fe(N(TMS) 2 ) 3 ) [26], (1,3butadiene)(toluene)Fe and (1,3-cyclohexadiene) (toluene)Fe [27], H 2 Fe[P(CH 3 ) 3 ] 4 and H 2 Fe[P(OCH 3 ) 3 ] 4 [13], bis(N,N′diisopropylacetamidinate)iron(II) (Fe 2 (μ-i Pr-MeAMD) 2 (η 2 -i Pr-MeAMD) 2 ) and bis(N,N′-di-tertbutylacetamidinate)iron(II) (Fe( t Bu-MeAMD) 2 ) [28,29]. Among these precursors, Fe(CO) 5 , Fe 2 Cp 2 (CO) 4 and H 2 Fe[P(OCH 3 ) 3 ] 4 structures contain oxygen elements, which tend to form impurity in the films.…”

“…In addition, the most often used precursor Fe(CO) 5 yields pure iron films at deposition temperatures of 130 °C-250 °C [14], however, it is highly toxic, flammable, and heat-, air-, and light-sensitive. (1,3butadiene)(toluene)Fe and (1,3-cyclohexadiene) (toluene)Fe were reported to produce Fe films using He as a carrier gas with low deposition temperature down to 150 °C, but limited information was provided on the processes and film characterization [27]. Other precursors are relatively stable, but higher deposition temperature above 200 °C is needed [26,30].…”

[cis‐(1,3‐Diene)2W(CO)2] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

“…[14] All other single-source organometallic tungsten precursor complexes require higher deposition temperatures to ensure the formation of well-defined, welladhered thin films. From iron [16] and ruthenium [17,18] MOCVD precursor complex chemistry we discovered how to control the MOCVD behavior of p-complexes with diene ligands. That includes the follow-up chemistry of the ligands, which significantly influences the composition of the resulting films.…”