MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

Reactor-scale uniformity of selective-area performance in InGaAsP system

“…The simulation is based on the study on the gas-phase decomposition of precursor [13], the modeling of reaction mechanism [14][15][16], and the temperature calculation [17]. The reactions for the simulation of InGaAsP growth are listed in Table 1.…”

Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor

“…Many researchers [2][3][4][5][6][7] have shown the effects of the various process factors, and numerical simulations can predict the film growth rate successfully. Despite the successful numerical studies, the effect of each parameter that controls the film deposition is not revealed clearly.…”

A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process

“…1, was developed. The graphite board, 3 mm thick and 267 mm in length, used to measure the reactor scale growth rate [4,9], was also included in the analysis. Heat conduction inside the quartz along the reactor walls was included.…”

“…Using this experimental reaction data, we tried to model the film growth process by using computational fluid dynamics and predict reactive intermediate [3]. In recent communications [4], the authors' group reported a successful three-dimensional numerical modeling for the commercial horizontal MOCVD reactor using not only InP and GaAs but also tertiary and quaternary materials such as InGaAs and InGaAsP. In this research, however, the imposed boundary conditions for the reactor walls were obtained from the two-dimensional heat transfer analysis.…”