MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence

Shee, S. K.; Kwon, Yong-Hwan; Lam, J. B.; Gainer, G. H.; Park, G.H; Hwang, Sheue‐Ling; Little, B. D.; Song, J. J.

doi:10.1016/s0022-0248(00)00716-8

Cited by 22 publications

(8 citation statements)

References 9 publications

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“…This feature accompanied with a superlinear increase in PL intensity clearly indicated the onset of stimulated emission. In contradiction to many reports on a strong dependence of the threshold pump density on the QW thickness [7] as well as on the degree of potential fluctuations [8], stimulation thresholds in our QW structures were found to be quite similar, ~30 kW/cm 2 . This controversy can be justified if the density of localized states estimated in our QWs is lower than the threshold carrier density required to achieve stimulated emission.…”

Section: Resultscontrasting

confidence: 99%

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

Žukauskas

Kazlauskas

Тамулайтис

et al. 2006

Physica Status Solidi (b)

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Role of band potential roughness on luminescence decay time and stimulated emission in InGaN quantum wells (QWs) grown by rf plasma-assisted molecular beam epitaxy (MBE) on bulk GaN substrates was studied. A high-photoexcitation regime used ensured conditions similar to those in operating laser diodes. Standard deviation of the potential fluctuations in different thickness InGaN QWs was found to vary in the range of 13 -22 meV as revealed by Monte Carlo simulation of localized exciton hopping. A negligible influence of this variation on the luminescence decay time (~700 ps) and stimulated emission threshold (~30 kW/cm 2 ) was observed. We attribute this insensitivity to the low density of localized states (~1 × 10 18 cm -3) estimated in our high-quality QWs grown by MBE, and therefore, assign extended states to be mainly responsible for the properties of highly-excited luminescence.

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Section: Resultscontrasting

confidence: 99%

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

Žukauskas

Kazlauskas

Тамулайтис

et al. 2006

Physica Status Solidi (b)

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“…Figure 3 presents the influence of barrier thickness of MQW on emission energy of PL and EL. The blue shift of emission energy of PL and EL from 2.51 to 2.43 eV and from 2.52 to 2.47 eV, respectively, with barrier thickness increasing from 8 to 16 nm in this study resembles the previous report [3,5]. Output power of LEDs performs highest value of 4.3 mW as the thinnest barrier of 8 nm in MQW shown in the inset.…”

Section: Resultssupporting

confidence: 88%

Effect of Barrier Thickness and Barrier Doping on the Properties of InGaN/GaN Multiple‐Quantum‐Well Structure Light Emitting Diode

Tsai

Chang²,

Chen³

et al. 2002

phys. stat. sol. (c)

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Optical and electrical properties of InGaN/GaN multi-quantum-well (MQW) structure light-emitting diodes (LED) are systematically studied as a function of barrier thickness and Si doping of barriers. The emission energy of photoluminescence (PL) and electroluminescence (EL) of MQWLEDs decrease with barrier thickness increased, but with Si doping of barriers decreased. The electrical characteristics of MQW-LEDs strongly depend on barrier thickness and Si-doped content in barriers. With increasing barrier thickness, forward voltages of MQW-LEDs dramatically reduce as well as the barriers are increasingly doped with Si. Reverse currents of MQW-LEDs measured at reverse bias 6 V present a similar behavior that Ir increase with increasing barrier thickness as well as increasing Si doped content in barriers. The experimental results imply an optimized quality of MQW-LED fabrication by an appropriate combination of barrier thickness and carrier concentration.Introduction III-V nitride semiconductor materials are attracting much attention in optical and electrical application for research filed and commercial purpose. Especially, the InGaN/GaN MQWs are widely used as the active layer in violet, blue, green LED and LD applications. Many studies on the growth of the InGaN/GaN MQWs to improve the optical properties have been explored [1][2][3][4][5][6][7]. These studies have investigated the effect of barrier doping, well and barrier thickness playing a crucial role on the optical of the MQWs. But there have been few reports on the effect of barrier doping level and barrier thickness on electrical properties of the MQWs. In this study, we report the influence of electronic carrier concentration in Si-doped barrier and the thickness of barrier on the optical and electrical properties of InGaN/GaN MQWLEDs.

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“…It has been reported that with increasing barrier width, the PL peak energies of the InGaN/ GaN QW samples shift to lower energy due to an enhancement of the quantum-confined Stark effect (QCSE) induced by the piezoelectric field effects. 23,24 Therefore, we deduce that the variation of barrier thickness by the formation of V-defects affects the emission peak position and could be responsible for the multiple emission peaks observed in the InGaN/ GaN MQWs with high In compositions.…”

Section: Discussionmentioning

confidence: 91%

Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

Cho

Lee

Kim

et al. 2001

Journal of Elec Materi

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MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence

Cited by 22 publications

References 9 publications

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

Effect of Barrier Thickness and Barrier Doping on the Properties of InGaN/GaN Multiple‐Quantum‐Well Structure Light Emitting Diode

Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

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