MOCVD growth and Mg-doping of InAs layers

Voronina, T. I.; Lagunova, T. S.; Kizhayev, S. S.; Molchanov, S. S.; Pushnyi, B. V.; Yakovlev, Yu. P.

doi:10.1134/1.1755887

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Cited by 10 publications

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“…Dopant diffusion coefficient in the substrate is smaller than in epitaxial layer. Squares are the experimental data from [21]. Circles are the experimental data from [22] Fig.2b.…”

Section: Discussionmentioning

confidence: 99%

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On Approach to Optimize Manufacturing of a Transistors with Two Sources to Decrease their Dimensions

E.L¹

2017

IJOE

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“…Dopant diffusion coefficient in the substrate is smaller than in epitaxial layer. Squares are the experimental data from [21]. Circles are the experimental data from [22] Fig.2b.…”

Section: Discussionmentioning

confidence: 99%

“…21.0003 between The Ministry of education and science of the Russian Federation and Lobachevsky State University of Nizhni Novgorod.…”

Section: Acknowledgementsmentioning

confidence: 99%