Mobility studies of degenerate, indium-doped CdS evaporated films

Learn, Arthur J.; Scott-Monck, J.

doi:10.1016/0022-3697(68)90058-9

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Electrical Properties1

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1975

1984

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“…We have discussed here the relationship of the electrical parameters with the indium concentration of the films. However, in the work of Learn and Scott-Monck (1968) only the variation of the mobility with the carrier concentration is considered.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Electrical properties of polycrystalline In-doped CdS thin films

Bertrán

Morenza

Esteve

et al. 1984

J. Phys. D: Appl. Phys.

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Polycrystalline In-doped CdS thin films have been deposited at 160, 220 and 250 degrees C by simultaneous evaporation of CdS and In from two crucibles. Films with In concentrations, NIn, in the 1017-1021 cm-3 range have been characterised by Hall measurements. The conductivity, mobility and carrier concentration dependences on In concentration are reported. For the lower In concentrations, the conductivity is essentially determined by the deposition temperature. At NIn=8*1018 cm-3 the conductivity presents a minimum, which is caused by a minimum in the mobility. The simultaneous rise of the carrier concentration is not sufficient to compensate the decrease of the mobility, contrary to the behaviour of polycrystalline silicon, where no conductivity minimum appears.

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Section: Electrical Propertiesmentioning

confidence: 99%