Mobility of the two-dimensional electron gas in GaAs-Al<i>x</i>Ga1−<i>x</i>As heterostructures

Lin, Ben-Chuan; Tsui, D. C.; Paalanen, M. A.; Gossard, A. C.

doi:10.1063/1.95360

Cited by 76 publications

(14 citation statements)

References 18 publications

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“…Phonon scattering in semiconductors is well documented. [15][16][17][18][19][20][21] The scattering of electrons by absorption of polar optical phonons in quantized 2D heterostructures has been considered by Price 21 and Ridley. 17 The characteristic lifetime for a quantum well of width w is given by…”

Section: Discussion and Transport Lifetime Modelmentioning

confidence: 99%

Electronic transport in modulation-doped InSb quantum well heterostructures

et al. 2008

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The mobility and carrier concentration of a number of InSb-based modulation-doped quantum well heterostructures are examined over a range of temperatures between 4.5 and 300 K. Wide well ͑30 nm͒ and narrow well ͑15 nm͒ structures are measured. The temperature dependent mobilities are considered within a scattering model that incorporates polar optical and acoustic phonon scatterings, interface roughness scattering, and scattering from charged impurities both in the three-dimensional background and within a distributed "quasitwo-dimensional" doping layer. Room temperature mobilities as high as 51 000 cm 2 / V s are reported for heterostructures with a carrier concentration of 5.8ϫ 10 11 cm −2 , while low-temperature mobility ͑below 40 K͒ reaches 248 000 cm 2 / V s for a carrier concentration of 3.9ϫ 10 11 cm −2. A Schrödinger-Poisson model is used to calculate band structures in the material and is shown to accurately predict carrier concentrations over the whole temperature range. Low-temperature mobility is shown to be dominated by remote ionized impurity scattering in wide well samples and by a combination of ionized impurity and interface roughness scattering in narrow well samples.

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Section: Discussion and Transport Lifetime Modelmentioning

confidence: 99%

Electronic transport in modulation-doped InSb quantum well heterostructures

et al. 2008

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“…A systematic more than three decades lasting work is from the beginning devoted mainly to the role of residual concentration of natural acceptors which are a limiting factor of the device applications of GaSb [1][2][3][4][5]. The residual acceptors in the concentration of 10 17 cm-3 were identified as complexes V oaGa 8 b [6] with the doubly ionizable structure [7]. Attempts have been made to reduce their content by growing the crystals from the nonstoichiometric melt [8,9).…”

Section: Resultsmentioning

confidence: 99%

“…Quantum Hall effect in such devices has now been accepted for the realization of primary resistance standard, Coogan et a/ [5) or for the precise determination of the fine structure constant a, Klitzing [6] by various standards laboratories of the world. GaAs-GaxAI 1 _xAs heterostructures have the advantage of a higher carrier mobility Lin eta/ [7] and the lower effective electron mass thereby satisfying eqn (2) more easily with the available magnetic field and temperatures as compared to the Si-MOSFET devices.…”

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confidence: 98%

Preliminary Investigations on Establishment of Quantum Standard for Resistance

Dutta¹,

Agarwal²,

Batra³

et al. 1992

IETE Journal of Research

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“…The temperature dependence of mobility is affected by :(i) the temperature dependence of the coupling constant which is independent of temperature for impurities and -T for acoustic phonons;(ii) the strength of the energy dependence of the averaged relaxation time (3a)together with thermal redistribution of the electrons : For remote impurities t -E3, for background impurities z -E , for acoustic phonons via piezoelectric coupling z -Ell2, and for deformation potential coupling z is independent of energy; Electron mobility as a function of temperature in a heterojunction for a) N , = 5.35 x 1011 and b) 3 X 10l1 cm+; d = 10 nm, NRI = 2 X 10l8 cm-S, and Ndepi = 6 x 1O1O cm-p. The dashed line in a) represents experimental data from[3] …”

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confidence: 99%

Low‐Temperature Electron Transport in Quasi‐Two‐Dimensional Systems

Pratsch

Suhrke

1988

Physica Status Solidi (b)

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A theoretical approach including multi-subband coupling is applied to electron transport in quasitwo-dimensional systems. This results in a modified contribution of the several scattering mechanisms to the total scattering rate. Taking into account the dominant scattering mechanisms the low-temperature mobility is calculated in the electric quantum limit and is compared with experimental data for heterojnnckions and single quantum wells (particularly consisting of Gal -*. AI,As/GaAs).Ein theoretisches Konzept mit verbesserter Einbeziehung der Rlultisubbandkopplung wird auf den Elektronentransport in quasizweidimensionalen Systemen angewandt. Dies fiihrt zu einem verhinderten Beitrag der einzelnen Streumechanismen zur Gesamtstreurate. Die Tiefternperaturbeweglichkeit wird fur einfache Potentialtopfe und Heteroiibergilnge (speziell aus Gal -%.-AI,As/GaAs) im ,,electric quantum limit " unter Einbeziehung der dominanten Streumechanismen berechnet und mit experimentellen Dnten verglichen.

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Mobility of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructures

Cited by 76 publications

References 18 publications

Electronic transport in modulation-doped InSb quantum well heterostructures

Electronic transport in modulation-doped InSb quantum well heterostructures

Preliminary Investigations on Establishment of Quantum Standard for Resistance

Low‐Temperature Electron Transport in Quasi‐Two‐Dimensional Systems

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