Mobility model for advanced SOI-MOSFETs including back-gate contribution

Abstract

This paper reports a newly developed compact mobility model for very thin SOI and BOX layer MOSFETs. It is demonstrated that the universality of the low-field mobility is still preserved. However, the effective electric field is not only determined by the field induced at surface but modified by the potential distribution across the SOI layer. Measured I-V characteristics are well reproduced under a wide variety of bias conditions.