Mobility Exceeding 10 cm<sup>2</sup>/(V·s) in Donor–Acceptor Polymer Transistors with Band-like Charge Transport

Yamashita, Yu; Hinkel, Felix; Marszałek, Tomasz; Zaja̧czkowski, Wojciech M.; Pisula, Wojciech; Baumgarten, Martin; Matsui, Hiroyuki; Müllen, Kläus; Takeya, Jun

doi:10.1021/acs.chemmater.5b04567

Cited by 152 publications

(164 citation statements)

References 23 publications

Supporting

Mentioning

162

Contrasting

Order By: Relevance

“…1). 38 Interestingly, the charge transport behavior at near room temperature was band-like as the mobility increased with decreasing temperature. 38 Interestingly, the charge transport behavior at near room temperature was band-like as the mobility increased with decreasing temperature.…”

Section: Benzo[c][213]thiadiazole and Its Derivativesmentioning

confidence: 99%

“…37 Very recently, CDT-BTZ-C20 (Chart 2) exceeded the hole mobility of 10 cm 2 V -1 s -1 through mechanical compression of polymer chains at the surface of an 5 ionic liquid. 38 Further chemical modification of the BT core produced the fluorinated BT units (either single-or double-fluorinated BT, 10 namely FBT and 2FBT, respectively, Chart 1). 38 Further chemical modification of the BT core produced the fluorinated BT units (either single-or double-fluorinated BT, 10 namely FBT and 2FBT, respectively, Chart 1).…”

Section: Benzo[c][213]thiadiazole and Its Derivativesmentioning

confidence: 99%

See 1 more Smart Citation

Benzothiadiazole and its π-extended, heteroannulated derivatives: useful acceptor building blocks for high-performance donor–acceptor polymers in organic electronics

2016

View full text Add to dashboard Cite

The past five years have witnessed significant achievements in the field of flexible, stretchable, and printable organic electronics, especially polymer-based organic photovoltaics (OPVs) and organic fieldeffect transistors (OFETs), which have become competitive to their inorganic counterparts. One of the main driving forces attributed to this remarkable progress is the rapid development of semiconducting 10 polymeric materials. Therefore, the design and synthesis of new building blocks for efficient polymer semiconductors has attracted increasing attention from both the academic and industrial communities. This review attempts to critically summarize the recent advances with respect to the electron-deficient building blocks based on benzothiadiazole and its π-extended, heteroannulated derivatives, which have been mostly developed over the past five years for constructing π-conjugated polymers, particularly 15 donor-acceptor (D-A) polymers. Semiconducting polymers containing these building blocks have demonstrated interesting properties and promising performances as active layers in OPVs and OFETs. The structural implications related to the performances of organic electronic devices are discussed. R SN SeN SeS TQ fDTBT CBT APhTQ BDTTQ BTI DTPBT DTNT TNTPT triple fused ring structures tetracyclic structures other large extended benzothiadiazole derivatives heteroatom substituted benzothiadiazolederivatives Chart 1 The chemical structures of benzothiadiazole and its π-extended, heteroannulated derivatives.Journal Name, [year], [vol], 00-00 | 13 eV. On the other hand, deep E LUMO levels can be obtained in BBT-based polymers, as represented by the E LUMO of −4.20 eV for PBBTPD (Chart 3). The difference between the E HOMO and E LUMO levels, called an electrochemical band gap, has a correlation with the end absorption of the UV-vis-NIR spectrum. 5 Notes and references 30The electron-deficient building blocks based on benzothiadiazole and its π-extended, heteroannulated derivatives for constructing high-performance semiconducting polymers are described.

show abstract

Section: Benzo[c][213]thiadiazole and Its Derivativesmentioning

confidence: 99%

Section: Benzo[c][213]thiadiazole and Its Derivativesmentioning

confidence: 99%

Benzothiadiazole and its π-extended, heteroannulated derivatives: useful acceptor building blocks for high-performance donor–acceptor polymers in organic electronics

2016

View full text Add to dashboard Cite

show abstract

“…[2][3][4][5][6][7][8][9][10][11][12] Therefore by scaling the channel length down to 10-1 μm, in principle OTFTs should be able to operate at relatively high (1-10 MHz) frequencies at reasonable (<10 V) applied voltages. [ 13 ] In practice, apart from some reports, [13][14][15][16][17][18][19][20][21][22] this is often not easy to achieve because of injection issues: [ 23,24 ] contact resistances tend to become dominant over the channel resistance in short channel transistors reducing the expected improvement of device performances.…”

Section: Doi: 101002/aelm201600097mentioning

confidence: 99%

Injection Length in Staggered Organic Thin Film Transistors: Assessment and Implications for Device Downscaling

Natali

Chen

Maddalena

et al. 2016

Adv Elect Materials

View full text Add to dashboard Cite

of organic semiconductors show carrier mobility in excess of 5 cm 2 V −1 s −1 when employed as active materials in long (>10 μm) channel organic thin fi lm transistors (OTFT). [2][3][4][5][6][7][8][9][10][11][12] Therefore by scaling the channel length down to 10-1 μm, in principle OTFTs should be able to operate at relatively high (1-10 MHz) frequencies at reasonable (<10 V) applied voltages. [ 13 ] In practice, apart from some reports, [13][14][15][16][17][18][19][20][21][22] this is often not easy to achieve because of injection issues: [ 23,24 ] contact resistances tend to become dominant over the channel resistance in short channel transistors reducing the expected improvement of device performances. [ 25 ] This situation is severely limiting the range of applications for OTFTs. [ 26 ] Indeed contact resistances arise from contact/semiconductor interface properties hence they are not expected to scale with the transistor channel length. To address this issue not only suitable modifi cations of the contact/semiconductor interface aimed at enhancing the contact injecting properties have to be implemented, [ 27 ] but also the device topology has to be considered. Staggered OTFTs, where the contacts and the transistor channel do not lie in the same plane, are usually characterized by lower contact resistances than coplanar ones: [ 28 ] while in these latter the injection area is limited by the accumulated channel depth (few nanometers), in the former the overlap between gate and source/drain contacts (many micrometers or even tens of micrometers) can be exploited, as shown in Figure 1 . The gate/contact overlapping length has to be suitably engineered: on the one hand it should be large enough to accommodate the injected current and to minimize contact resistances; but on the other hand it should not be too large because overlapping areas not effectively involved in injection solely result in additional parasitic capacitances that deteriorate the device speed. [ 13,29 ] It is therefore important to quantify the injection length, which is the length over which sizeable carrier injection occurs. [ 30,31 ] Despite the large number of studies on contact effects in OTFTs, [ 24,32 ] few of them discuss the effect of the gate to contact overlap: Xu et al. found a relationship between the optimal contact length and the semiconductor thickness in staggered OTFT. [ 33 ] Park et al. found that threshold voltage, fi eld effect mobility and contact resistances are affected by the contact length in staggered OTFT; [ 34 ] Wang et al. simulated the effect of contact length scaling. [ 35 ] Ante et al. studied the effect of contact In staggered thin fi lm transistors, the injection length is the fraction of the gate to contact overlap that is effectively involved in current injection. Its assessment is important to properly downscale device dimensions. In fact, in order to increase transistor operation speed, the whole device footprint should be downscaled, which means both the gate to contact overlap and the channel length, as ...

show abstract

“…[1][2][3][4][5][6][7] Such progress coupled with the high compatibility of solution-processable organic semiconductors with plastic or metal foil substrates makes them ideal candidates for cost-effective, mechanically flexible electronic devices for various applications, such as printed radio frequency identification tags for item-level tagging, drivers for flexible displays, wearable electronics, distributed sensors, and integrated, nonvolatile memory devices. [8][9][10][11][12][13][14][15][16][17][18][19][20] [21][22][23][24][25] Such remarkable p-channel mobilities, obtained in devices with fairly promising shelf-life and operational stabilities, have been demonstrated with conjugated polymers based on new building units, such as diketopyrrolopyrrole, [24,26,27] isoindigo, [28,29] and indacenodithiophene. [30] Similar efforts have been devoted to improving n-channel polymer semiconductors, with the performances of n-type devices still lagging behind their p-channel counterparts.…”

Section: Introductionmentioning

confidence: 99%

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Sung

Luzio

Park

et al. 2016

Adv Funct Materials

View full text Add to dashboard Cite

Interdependence of chemical structure, thin-film morphology, and transport properties is a key, yet often elusive aspect characterizing the design and development of high-mobility, solution-processed polymers for large-area and flexible electronics applications. There is a specific need to achieve >1 cm 2 V −1 s −1 field-effect mobilities (μ) at low processing temperatures in combination with environmental stability, especially in the case of electron-transporting polymers, which are still lagging behind hole transporting materials. Here, the synthesis of a naphthalene-diimide based donor-acceptor copolymer characterized by a selenophene vinylene selenophene donor moiety is reported. Optimized field-effect transistors show maximum μ of 2.4 cm 2 V −1 s −1 and promising ambient stability. A very marked film structural evolution is revealed with increasing annealing temperature, with evidence of a remarkable 3D crystallinity above 180 °C. Conversely, transport properties are found to be substantially optimized at 150 °C, with limited gain at higher temperature. This discrepancy is rationalized by the presence of a surface-segregated prevalently edge-on packed polymer phase, dominating the device accumulated channel. This study therefore serves the purpose of presenting a promising, high-electron-mobility copolymer that is processable at relatively low temperatures, and of clearly highlighting the necessity of specifically investigating channel morphology in assessing the structure-property nexus in semiconducting polymer thin films.

show abstract

Mobility Exceeding 10 cm²/(V·s) in Donor–Acceptor Polymer Transistors with Band-like Charge Transport

Cited by 152 publications

References 23 publications

Benzothiadiazole and its π-extended, heteroannulated derivatives: useful acceptor building blocks for high-performance donor–acceptor polymers in organic electronics

Benzothiadiazole and its π-extended, heteroannulated derivatives: useful acceptor building blocks for high-performance donor–acceptor polymers in organic electronics

Injection Length in Staggered Organic Thin Film Transistors: Assessment and Implications for Device Downscaling

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Contact Info

Product

Resources

About

Mobility Exceeding 10 cm2/(V·s) in Donor–Acceptor Polymer Transistors with Band-like Charge Transport

Cited by 152 publications

References 23 publications

Benzothiadiazole and its π-extended, heteroannulated derivatives: useful acceptor building blocks for high-performance donor–acceptor polymers in organic electronics

Benzothiadiazole and its π-extended, heteroannulated derivatives: useful acceptor building blocks for high-performance donor–acceptor polymers in organic electronics

Injection Length in Staggered Organic Thin Film Transistors: Assessment and Implications for Device Downscaling

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Contact Info

Product

Resources

About

Mobility Exceeding 10 cm²/(V·s) in Donor–Acceptor Polymer Transistors with Band-like Charge Transport