Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Kang, Jung Han; Cho, Edward Namkyu; Kim, Chang-Eun; Lee, Min Jung; Lee, Su Jeong; Myoung, Jae Min; Yun, Ilgu

doi:10.1063/1.4809727

Cited by 48 publications

(33 citation statements)

References 13 publications

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“…The decrease in the intensity can be explained by the passivation of oxygen vacancy sites with ambient hydrogen/water molecules, consistent with the reported in [23]. The existence of hydrogen is usually confirmed by the oxidized (−OH) subband at the binding energies of ∼532.3 eV in the O 1s spectrum [24], but our experimental evidence indicates the reduction in intensity of both the oxygen vacancy (531.55 eV) and the −OH (532.3 eV), after the incorporation of hydrogen/water molecules. In Fig.…”

supporting

confidence: 87%

Effect of SiO2 and SiO2/SiN<italic>x</italic> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Chowdhury

Mativenga

et al. 2015

IEEE Trans. Electron Devices

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We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO 2 ) and bilayer (SiO 2 /SiN x ) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts ( V ON ), the size of which increased with storing time. The negative V ON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO 2 passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO 2 passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO 2 interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).Index Terms-Amorphous-indium-gallium zinc oxide (a-IGZO), oxide thin-film transistors (TFT) reliability, SiO 2 and SiN x passivation layer, TFT.

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supporting

confidence: 87%

Effect of SiO2 and SiO2/SiN<italic>x</italic> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Chowdhury

Mativenga

et al. 2015

IEEE Trans. Electron Devices

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“…The crystal structure of plasma treated AZO and TZO films did not change considerably, but the resistivity of plasma treated films decreased significantly. Various plasma surface treatment, such as N 2 O [15], N 2 , SiH 4 , NH 3 [16], Ar [17], H 2 [18], have remarkable effects on the structural, optical and electrical properties of InGaZnO 4 (IGZO) films. It is recently found that the He plasma treatment is also an effective method to improve the conductivity of IGZO films [19].…”

Section: Introductionmentioning

confidence: 99%

He plasma treatment of transparent conductive ZnO thin films

Yao

Chen

Sun

et al. 2015

Applied Surface Science

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“…Consequently, the electron detrapping rate and the decreasing rate of ∆V th is not sensitive to V Stress . (oxygen-metal bonding, -O-M), the oxygen vacancies (V O ) and the weakly bound oxygen species on the a-IGZO surface (such as -O-H), respectively [16]. It is seen that after 60-s N 2 O plasma treatment, the intensity of the O I peak increases from 46.78% to 51.06%, and the intensity of the O II peak decreases from 30.19% to 27.92%.…”

Section: Methodsmentioning

confidence: 99%

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of a‐IGZO TFTs

Zhou

Zhang

Shao

et al. 2018

Symp Digest of Tech Papers

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The asymmetric effects of gate‐bias stress voltage on the stability under positive gate‐bias stress (PBS) and negative gate‐bias stress (NBS) of amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) are investigated. It is observed that under PBS, the threshold voltage shift (∆Vth) increases with the increased value of the gate‐bias stress voltage (VStress), which is due to the enhanced electron trapping at/near the interface of the channel and the gate insulator. However, under NBS, the ∆Vth is nearly unaffected by the Vstress. As the NBS‐induced negative ∆V th is resulted from electron‐detrapping from the donor‐like states related to oxygen vacancies, it is supposed that the rate of electron‐detrapping is not sensitive to the negative gate‐bias voltage. The influence of N2O plasma back‐channel treatment is also studied. The stability under NBS is effectively improved after the N2O plasma treatment, which originates from the decreased density of oxygen‐vacancy related donor‐like states within the a‐IGZO channel layer.

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Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Cited by 48 publications

References 13 publications

Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

He plasma treatment of transparent conductive ZnO thin films

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of a‐IGZO TFTs

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