2015
DOI: 10.1039/c5cc00980d
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Mo2Ga2C: a new ternary nanolaminated carbide

Abstract: We report the discovery of a new hexagonal Mo2Ga2C phase, wherein two Ga layersinstead of one -are stacked in a simple hexagonal arrangement in between Mo2C layers. It is reasonable to assume this compound is the first of a larger family.

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Cited by 163 publications
(140 citation statements)
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“…Moreover, Mo2CTz MXene [29] has been synthesized through selective etching of gallium (Ga) from a thin film of the new ternary nanolaminated Mo2Ga2C. [30][31] Besides, large-area high-quality 2D α-Mo2C, WC, and TaC crystals have been fabricated by a chemical vapour deposition (CVD) process. [32] However, potential MXene compounds in materials systems where Al-containing MAX phases are not established, such as Hf2C and Zr2C, are yet to be produced.…”
Section: A New Two-dimensional Zirconium Carbide Mxene By Selective Ementioning
confidence: 99%
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“…Moreover, Mo2CTz MXene [29] has been synthesized through selective etching of gallium (Ga) from a thin film of the new ternary nanolaminated Mo2Ga2C. [30][31] Besides, large-area high-quality 2D α-Mo2C, WC, and TaC crystals have been fabricated by a chemical vapour deposition (CVD) process. [32] However, potential MXene compounds in materials systems where Al-containing MAX phases are not established, such as Hf2C and Zr2C, are yet to be produced.…”
Section: A New Two-dimensional Zirconium Carbide Mxene By Selective Ementioning
confidence: 99%
“…Moreover, Mo2CTz MXene [29] has been synthesized through selective etching of gallium (Ga) from a thin film of the new ternary nanolaminated Mo2Ga2C. [30][31] Besides, large-area high-quality 2D α-Mo2C, WC, and TaC crystals have been fabricated by a chemical vapour deposition (CVD) process.[32] However, potential MXene compounds in materials systems where Al-containing MAX phases are not established, such as Hf2C and Zr2C, are yet to be produced.Herein, for the first time, we report the preparation of Zr-containing 2D carbide based on selective extraction of Al-C units from an alternative layered ternary Zr3Al3C5, benefiting from the relatively weakly bonded and hydrolysis-prone Al-C layers in the Zr3Al3C5 crystal structure. Zr3Al3C5 is a typical member of the layered ternary and quaternary transition-metal carbides beyond MAX phases; holding a common formula of MnAl3C2 and Mn [Al(Si)]4C3 (where M= Zr or Hf, n = 1-3).…”
mentioning
confidence: 99%
“…The Mo2C compound was generated through selective etching of gallium (Ga) from a thin film of the new ternary nanolaminated MAX phase related material Mo2Ga2C [13]. The produced MXene material was characterized using X-ray diffraction (XRD), (scanning) transmission electron microscopy ((S)TEM), and energy dispersive X-ray spectroscopy (EDX).…”
mentioning
confidence: 99%
“…Optimization of the Mo2Ga2C thin film deposition was performed in line with previous work [13,15]. The overall composition of resulting samples, determined through elastic recoil detection analysis (ERDA), was 39, 43, and 18 at% of Mo, Ga, and C, respectively [13], with a structural analysis showing primarily Mo2Ga2C, although with some intergrown layers of Mo2GaC [13]. Selective etching of the Ga layers was carried out by immersing the thin films in 50% concentrated hydrofluoric acid (HF(aq)) for 3 h at a temperature of 50 ºC.…”
mentioning
confidence: 99%
“…19 When solid solutions are taken into account, the situation is not very different. For instance, Al-containing Ti/V and Ti/Nb solid solutions exist, 20 but these do not add any new elements to those already known to bond to Al.…”
Section: Introductionmentioning
confidence: 99%