Mo Molybdenum

Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films

“…A positive slope of Rxy (B) plots indicate that holes are the dominant carriers. The data is presented after subtracting the longitudinal resistance of the samples.The value of Hall coefficient in our disordered Mo films is very close to the value reported for 30 nm thick amorphous Mo film[51,52]. It could be observed from inset (b) of the figure 9 that while mean free path of charge carrier does not change much up to P = 7 bar but thereafter reduces by one order of magnitude for insulating samples, the charge carriers shows a monotonous decrease by two orders of magnitude with increase in deposition pressure.…”

“…Even though we find a high carrier concentration in our samples, the mobility ~ 10 -1 cm 2 /V-sec. and electron mean free path ~10 -10 -10 -11 m are several orders of magnitude lower than that of metals or semiconductors and in particular from that of Mo metal [51,53]. These low values of charge mobility and mean free path are commensurate with the assertion of the high degree of disorder in our samples.…”

“…A positive slope of Rxy (B) plots indicate that holes are the dominant carriers. It is already reported[51] that Mo is a compensated metal with holes having higher mobility (h ~ 2e at 300 K) than electrons and thus shows positive Hall voltage. Variation of Hall coefficient as a function of deposition pressure is shown in inset (a) of figure 9.…”

Studies on DC transport and terahertz conductivity of granular molybdenum thin films for microwave radiation detector applications

“…The Hall effect measurements have been performed on the samples at different temperatures from 50-300 K. Mo is a compensated metal with the mobility of holes higher than that of the electrons (h ~ 2e at 300 K) 42 , thereby giving rise to a positive Hall coefficient. At room temperature, the carrier mobility and mean free path for the Mo-A film have been estimated to be 1.03×10 -1 cm 2 /V-s and 1.6×10 -10 m, while for Mo-B the values are 1.34×10 -1 cm 2 /V-s and 2.0×10 -10 m. Despite this high carrier density, the carriers are tending to localize due to very small values of mobility and mean free paths as compared to those of bulk Mo 42,44 . This reduction of le in the granular Mo films has been reported earlier as well 14 and is the reason behind the poor metallic character of the films with two orders higher 300K values as compared to the bulk Mo.…”