Mo-doped BiVO₄ thin films – high photoelectrochemical water splitting performance achieved by a tailored structure and morphology

Abstract

Facile sol–gel synthesis of Mo:BiVO4 thin films with optimized morphology results in reduced surface recombination and enhanced hole transfer efficiency.

Photoactive Bismuth Vanadate Structure for Light‐Triggered Dissociation of Alzheimer's β‐Amyloid Aggregates

“…We synthesized Mo‐doped BiVO 4 (Mo:BiVO 4 ) photoelectrodes by adding Mo precursor during the synthesis of BiVO 4 and characterized the as‐prepared film using Raman spectroscopy and XRD. As shown in Figure A, the Raman peak assigned to the VO stretching modes shifted to a lower wavenumber than that of pristine BiVO 4 with the increasing concentration of Mo precursor, which was attributed to the influence of Mo substitution on the local crystal structure of the BiVO 4 . The Mo ions did not cause significant changes in the crystal structure of monoclinic BiVO 4 according to our XRD analysis (Figure S11, Supporting Information).…”

Dissolution of BiVO4 Photoanodes Revealed by Time-Resolved Measurements under Photoelectrochemical Conditions

“…BiVO 4 has a flat-band potential at ∼0.2 V RHE , 11 27 Holes prefer to participate in more cathodic reactions at the surface, including water oxidation at 1.23 V RHE , or oxidation of the hole scavenging citrate, generalized as reaction 1 in Scheme 1. As a result, Bi(III) oxidation can be protected by the more cathodic reactions in the electrolyte, which renders the photoanode stable against self-oxidation.…”

“…The synthesis of BiVO 4 has been reported by Rohloff et al 11 Bismuth 2-ethylhexanoate and vanadium oxytriethoxide were mixed and stirred for 4 h to form a homogeneous precursor solution. Then, the solution was dip-coated on fluorine-doped tin oxide substrates, which were then calcined at 450°C for 2 h.…”

Insight into the PEC and interfacial charge transfer kinetics at the Mo doped BiVO4photoanodes

“…6,[19][20][21][22] To overcome these challenges, a number of the strategies have been widely investigated such as; nanostructure control, [23][24][25][26] band engineering, 17,[27][28][29][30][31][32][33][34] heteroatom doping, [35][36][37][38][39][40][41] generation of oxygen vacancy 22,[42][43][44] and the oxygen evolution catalyst (OEC) incorporation. 18,[45][46][47][48][49][50][51][52][53] SnO 2 has been used for the heterojunction formation in the BiVO 4 system which suppresses the back electron-hole recombination process. 17 Additionally, the SnO 2 underneath of BiVO 4 blocks the surface state of the ITO/FTO.…”