Mn₂NT₂ (T = O, F) Nanosheets for Electrically and Thermally Driven Magnetic Tunnel Junctions

Abstract

Because of their unusual electrical and magnetic properties, half-metals are well suited for sophisticated nanoscale spintronics applications. We examine the electronic structure, spin transport properties, and thermal spin-related transport properties of Mn2NT2 (TO, F) monolayers by using the first principles, inspired by the recently published two-dimensional (2D) MXene family with diverse electronic properties. In addition, the constructed Mn2NO2/Ti2CO2/Mn2NO2 and Mn2NF2/Ti2CO2/Mn2NF2 devices exhibit bias-dependent 100% spin filtering effects. The Mn2NF2/Ti2CO2/Mn2NF2 device exhibits up to a tunneling magnetoresistance effect of 109% and thermally induced magnetoresistance effect of 1014% under temperature-driven conditions, with the thermally induced magnetoresistance also being the highest ratio available in 2D material-based in-plane magnetic tunnel junctions (MTJs). 2D Mn2NT2 is a viable option for spintronics applications due to its high Curie temperature, excellent spin transport, and thermal spin-dependent transport, which will promote extensive research on such highly spin-polarized 2D nanosystems.

Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel junctions based on MXene Cr2C

“…And a TMR value of as high as 10 12 was reported for the in-plane MTJ Mn 2 NF 2 /Ti 2 CO 2 /Mn 2 NF 2 . 34 Interestingly, an in-plane double-barrier MTJ (IDB-MTJ) based on V B -h-NB nanoribbons has also been reported. 35 Due to its unique structural characteristics, this IDB-MTJ has particular advantages relative to traditional MTJs or vdW MTJs.…”

Co3X8 (X = Cl and Br): multiple phases and magnetic properties of the Kagome lattice

“…[1][2][3][4] Notably, their magnetic properties exhibit rich characteristics, owing to surface modification, 5,6 interfacial interactions, 5,7 and potential coupling with other properties. [8][9][10][11] Moreover, the magnetic properties of 2D materials can be easily regulated by various strategies, such as doping, interlayer incorporation, [12][13][14][15] strain, 16,17 functionalization, 6,18 and applying an electric field. 19,20 Forming contacts or heterojunctions with other materials is also commonly used to tune the magnetic properties, 21,22 which is desired for application in nanodevices and spintronics.…”

Theoretical prediction of two-element two-dimensional layered structures and efficient doping engineering on carbon phosphide

“…Because of its unusual electronic properties, it has been making great progress in the application of spintronic devices. [24][25][26] After the half-metal, Wang 27 proposed a new type of spinpolarization material -the spin-gapless semiconductor, which displays zero gap in one spin-channel and a finite gap in another spin-channel. The spin-gapless semiconductor has sparked worldwide interest in the field of materials science and is expected to be an important candidate material due to its application for next-generation spintronics 28 and has been applied to raise the magnetoresistance ratio successfully.…”