Mn-induced modifications of Ga 3d photoemission from (Ga, Mn)As: evidence for long range effects

Kanski, J.; Ulfat, İntikhab; Ilver, L.; Leandersson, M.; Sadowski, J.; Karlsson, K.; Pal, Prabir

doi:10.1088/0953-8984/24/43/435802

Cited by 1 publication

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References 17 publications

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“…All the other orbitals contain the remaining holes, without any significant distribution. These numbers point to a local change in the electronic structure located primarily around the impurity, and are in close agreement with a recent core level photoemission study focusing on the Ga 3d spectra from very dilute (Ga,Mn)As [46], where each Mn atom is found to affect a region corresponding to a sphere with 0.7 nm radius.…”

Section: Host Valence Band and Induced Holessupporting

confidence: 90%

Electron correlations in MnxGa1–xAs as seen by resonant electron spectroscopy and dynamical mean field theory

et al. 2013

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After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off-and on-resonance photo emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean field theory, using exact diagonalization as impurity solver. Theory is found to accurately reproduce measured data and illustrates the importance of correlation effects. Our results demonstrate that the manganese states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits-off from the valence band edge, whereas the induced holes seem located primarily around the manganese impurity.

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Section: Host Valence Band and Induced Holessupporting

confidence: 90%