Abstract:Mn–In–Co, Mn–In–Pt and Mn–Pt metallizations are used to form ohmic contact on Be-implanted rapid thermally annealed GaAs. The rapid thermal alloying of contact metallizations are performed in A.G. Associates Heat pulse system in nitrogen atmosphere in the temperature range of 350°C to 800°C for 5 seconds. The contacts were found to be ohmic at an annealing temperature of 450°C. The In–Mn–Co metallization showed higher minimum contact resistivity (5 × 10−4 ohm.cm2 ) than In–Mn–Pt metallization (1.5 × 10−5 ohm.c… Show more
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