Mn-doped monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>: An atomically thin dilute magnetic semiconductor

Ramasubramaniam, Ashwin; Naveh, Doron

doi:10.1103/physrevb.87.195201

Cited by 427 publications

(253 citation statements)

References 51 publications

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“…Magnetism was also found resulting from the adsorption of various adatoms (H-, B-, C-, N-, F-) [14] The reported results indicate that structure relaxation appears to be a crucial factor in the development of magnetism as Jahn-Teller distortions destroying the C 3v lattice symmetry lead to the disappearance of magnetism [5]. Additionally, it has been found that the results show noticeable dependence on the cell size used in the computer simulations [4][5][6].…”

Section: Introductionmentioning

confidence: 63%

“…TMDs it was only recently that a few works have been reported on their magnetic features [3][4][5][6]. To the best of our knowledge, no magnetism has been experimentally observed in the 2D's MoS 2 and WS 2 .…”

Section: Introductionmentioning

confidence: 88%

“…Magnetism has been confirmed in the 2D's VS 2 and VSe 2 [7] and in metal intercalated TMDs M x NbSe 2 , (M: Fe and Cu [8]). However, the structural analogue of graphene with the single layer TMDs [9][10][11] has led to the search for magnetism in doped TMDs of zero-dimensional (0D) [9,10], one-dimensional (1D) [12] and two-dimensional (2D) [4][5][6][13][14][15] form.…”

Section: Introductionmentioning

confidence: 99%

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Tunable magnetic properties of transition metal dopedMoS2

2014

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We report a detailed investigation of the electronic and magnetic properties of the transitionmetal (TM) doped two-dimensional (2D) MoS 2 using ab initio calculations. The doping is achieved by substituting two or more Mo-atoms by TM-atoms of the 3d-series. Additionally, the effect of codoping on the 2D-MoS 2 by cation-cation and cation-anion pairs is also investigated. Our results demonstrate that the TM-doping of 2D-MoS 2 leads to a significant reduction of the energy gap and the appearance of magnetic features whose major characteristic is the ferromagnetic coupling of the TM-dopants. The latter is found to be significantly enhanced by codoping as demonstrated by codoping with (Co,Cu), (Ni,Cu), (Mn,Cu) and (Mn,Sb) codopant-pairs.

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Section: Introductionmentioning

confidence: 63%

Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

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Tunable magnetic properties of transition metal dopedMoS2

2014

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“…However, neither graphene nor most of the TMDs monolayers is intrinsically magnetic. Many methods can be used to induce the magnetic properties in the TMDs monolayers, mainly including doping, [7][8][9][10] hydrogenation, [11][12][13][14] and forming zigzag edges. 15,16 In the nanoelectronic applications, however, we expect the magnetism can be precisely and flexibly controlled.…”

Section: Introductionmentioning

confidence: 99%

Strain-controlled switch between ferromagnetism and antiferromagnetism in1T−CrX2(X=Se, Te) monolayers

Shao

et al. 2015

Phys. Rev. B

137

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We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T -CrX2 (X = Se, Te) monolayers based on the first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under the biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further stabilized when the strain is increased. Moreover, the CrSe2 monolayer changes to be halfmetallic when the tensile strain is larger than 10%. While for the CrTe2 monolayer, the critical strain at which the transition between the FM and AFM states occurs is compressive, of −1%. Relatively small tensile strains of 4% and 2%, respectively, can enhance the Curie temperature of CrSe2 and CrTe2 monolayers above the room temperature. The strain-induced switch between the FM and AFM states in CrSe2 (CrTe2) monolayer can be understood by the competition between the AFM Cr-Cr direct exchange interaction and FM Cr-Se(Te)-Cr superexchange interaction. The tunable and attractive magnetic and electronic properties controlled by the flexible strain are desirable for the future nanoelectronic applications.

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“…Alloying is a general strategy to turn carrier types and carrier densities of materials, [49][50][51][52][53][54][55] which is more convenient than common methods such as electrostatic gating and strain modulation. Remarkably, alloying is effective to modulate band structure of materials to realize a continuous broader band response for nanoelectronics and nanophotonics.…”

Section: Alloying Synthesismentioning

confidence: 99%

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

Tong¹,

Liu²,

Renli³

et al. 2017

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The layered structure of transition metal dichalcogenides (TMDs) gives rise to many novel properties for functional applications in a wide range of fields. However, successful synthesis of TMDs and directly modulating properties of TMDs during the growth process are facing great challenges, which limits their future practical applications. In this review, we focus on current state of the art chemical vapor deposition (CVD) synthesis of TMDs alloys, convenient methods to modulate properties of TMDs by CVD. Then, TMDs-based lateral and vertical heterostructures utilizing CVD methods are reviewed. Finally, we summarize patterned growth of TMDs briefly.

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Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor

Cited by 427 publications

References 51 publications

Tunable magnetic properties of transition metal dopedMoS2

Tunable magnetic properties of transition metal dopedMoS2

Strain-controlled switch between ferromagnetism and antiferromagnetism in1T−CrX2(X=Se, Te) monolayers

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

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