Mn-Activated Y2O3–GeO2 Phosphors for Thin-Film Electroluminescent Devices

Minami, Tadatsugu; Yamazaki, Masashi; Miyata, Toshihiro; Shirai, Tetsuya

doi:10.1143/jjap.40.l864

Cited by 13 publications

(6 citation statements)

References 6 publications

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“…1,2 Because of high luminous efficiency, (Y 2 O 3 -GeO 2 ):Mn phosphor has been studied as a promising material for TFEL displays as well as plasma display panels and field emission displays. 3 In this view, it seems interesting to study the luminescence of some rare earths in the (Y 2 O 3 -GeO 2 ).…”

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confidence: 99%

Photoluminescence Properties of Eu[sup 3+]-Activated Y[sub 2]GeO[sub 5] Phosphors

Park¹,

Ahn²,

Lim³

et al. 2003

J. Electrochem. Soc.

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The luminescence and energy transfer properties of Eu 3ϩ in Y 2 GeO 5 have been investigated. The critical concentration at which the concentration quenching occurred under UV excitation were x ϭ 0.4 in (Y 1Ϫx Eu x ) 2 GeO 5 . To investigate the distinction of photoluminescence behavior of two transitions ͑i.e., 5 D 0 → 7 F 1 and 5 D 0 → 7 F 2 transition͒ for the Eu 3ϩ ion, the decay curves for both 5 D 0 → 7 F 1 and 5 D 0 → 7 F 2 transition have been analyzed. Furthermore the energy migration process of this sample was investigated using Yokota and Tanimoto's formula based on diffusion limited quenching.The (Y 2 O 3 -GeO 2 ) phosphor has recently found an oxide phosphor as a phosphor material for the emitting layer of thin-film electroluminescent ͑TFEL͒ devices. 1,2 Because of high luminous efficiency, (Y 2 O 3 -GeO 2 ):Mn phosphor has been studied as a promising material for TFEL displays as well as plasma display panels and field emission displays. 3 In this view, it seems interesting to study the luminescence of some rare earths in the (Y 2 O 3 -GeO 2 ). Among them, the Eu 3ϩ ion has attracted great attraction due to the application as red phosphors. [4][5][6][7] In this work, we prepared Eu 3ϩ -activated Y 2 GeO 5 phosphor by conventional solid-state reaction and found that this phosphor has a very high critical concentration. Dexter and Schulman, 8 have described that the concentration quenching of the activator is related to cross relaxation and/or energy migration to quenching sites. These phenomena can be due to electromagnetic multipolar interaction or exchange interaction. To obtain insight into the mechanism responsible for the concentration quenching of the Eu 3ϩ emission in this case, we have investigated Y 2 GeO 5 :Eu phosphor over a wide concentration range. ExperimentalThe powder samples with the general formula (Y 1Ϫx Eu x ) 2 GeO 5 were prepared by the solid-state reaction method. The starting materials used in the preparation of this phosphor were powders of greater purity than 99.99% of Y 2 O 3 , GeO 2 , and Eu 2 O 3 . Preweighed powders were mixed thoroughly in acetone in an agate mortar and dried at 130°C for about 24 h to drive off the solvent and successively heat-treated at several conditions of temperature and duration time, followed by an additional grinding and firing in nitrogen atmosphere. The resulting powders were identified using an X-ray diffraction ͑XRD͒ system with Cu K␣ radiation ͑Ni filter͒. Here, only samples heat-treated at 1500°C for 3 h have been considered.The excitation and emission spectra of the fired samples were measured using a Perkin-Elmer LS-50 luminescence spectrometer with a xenon flash lamp (⌬v 1/2 ϭ 10 s). The decay measurement was performed at 594 nm emission for 5 D 0 → 7 F 1 transition and 611 nm emission for 5 D 0 → 7 F 2 transition, respectively. The pumping source was 254 nm and the pulse duration was 6 ns. Results and DiscussionIn the XRD patterns of the Y 2 GeO 5 powders heat-treated with different amounts of Eu 3ϩ , most peaks correspond to the Y 2 ...

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mentioning

confidence: 99%

Photoluminescence Properties of Eu[sup 3+]-Activated Y[sub 2]GeO[sub 5] Phosphors

Park¹,

Ahn²,

Lim³

et al. 2003

J. Electrochem. Soc.

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“…For bond-valence parameters, see: Brese & O'Keeffe (1991), and for the bond-valence model, see: Brown (1981Brown ( , 1992. For oxide phosphors, see: Minami et al (2001Minami et al ( , 2002Minami et al ( , 2004. Data used to model the second phase present in the reaction product, Y 2 Ge 2 O 7 , were taken from Redhammer et al (2007).…”

Section: Related Literaturementioning

confidence: 99%

“…Its advantages include portable size with low power consumption, broad viewing angle, and wide operating-temperature range among others (Zhao et al, 2003). New multicomponent oxide phosphor, Mn-activated Y 2 O 3 -GeO 2 , is promising as the thin-film emitting layer for thin-film electroluminescent (TFEL) devices (Minami et al, 2001). The oxide phosphor for use in those electroluminescent devices is formed from yttrium oxide and a transition metal as an activator, or from Y-Ge-O oxide and one metallic element to form M:Y 2 GeO 5 where M is a metal (Minami et al, 2002;Minami et al, 2004).…”

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confidence: 99%

Rietveld refinement of Y₂GeO₅

Rivera-Muñoz

Bucio

2009

Acta Cryst E

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Y2GeO5 (yttrium germanium pentaoxide) was synthesized by solid-state reaction at 1443 K. The arrangement, which has monoclinic symmetry, is isostructural with Dy2GeO5 and presents two independent sites for the Y atoms. Around these atoms there are distorted six-coordinated YO6 octahedra and seven-coordinated YO7 pentagonal bipyramids. The YO7 polyhedra are linked together, sharing their edges along a surface parallel to ab, forming a sheet. Each of these parallel sheets is interconnected by means of GeO4 tetrahedra, sharing an edge (or vertex) on one side and a vertex (or edge) on the other adjacent side. Parallel sheets of YO7 polyhedra are also interconnected by undulating chains of YO6 octahedra along the c axis. These octahedra are joined together, sharing a common edge, to form the chain and share edges with the YO7 polyhedra of the sheets.

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“…High luminance blue 1, red 2–4, green 5–8, and yellow 9, 10 oxide phosphors, superior to the hygroscopic sulfides in terms of chemical stability, have been reported as efficient active layers of monochrome thin film electroluminescent (TFEL) displays. Even high luminance multicolor emitting TFEL devices have been fabricated using multi‐component oxide phosphor systems 11–15. But commercialization of oxide phosphor electroluminescence for flat panel displays on glass substrates requires the deposition of phosphors at temperatures 700 °C or lower.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates

Krishna

Anoop

Jayaraj

2012

Physica Status Solidi (a)

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An alternating current thin film electroluminescent (ACTFEL) device was fabricated on commercial glass substrate with dysprosium doped zinc gallate as the active layer. The phosphor layer and the top dielectric layer were deposited using rf magnetron sputtering technique. The devices fabricated with an asymmetric double insulating structure gave a white electroluminescent (EL) emission when driven by a voltage pulse frequency of 1.5 kHz, even without post‐deposition annealing of the active layer. Such an emission resulted from the simultaneous occurrence of multicolor transitions, characteristic of the dopant ion. The exponential dependence of luminance on applied voltage was quite evident from the luminance–voltage (L–V) curves. Devices were also fabricated with a highly crystallized interfacial layer of ZnO in between the substrate and the phosphor layer. Such devices could withstand a wider range of applied voltage, henceforth resulting in enhanced device performance. The chromatic quality of the EL emissions from both the devices were gauged using chromaticity coordinates. The CIE coordinates of fabricated ZnGa2O4:Dy3+ ACTFEL devices (a) without and (b) with ZnO interfacial layer.

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Mn-Activated Y₂O₃–GeO₂ Phosphors for Thin-Film Electroluminescent Devices

Cited by 13 publications

References 6 publications

Photoluminescence Properties of Eu[sup 3+]-Activated Y[sub 2]GeO[sub 5] Phosphors

Photoluminescence Properties of Eu[sup 3+]-Activated Y[sub 2]GeO[sub 5] Phosphors

Rietveld refinement of Y₂GeO₅

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates

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Mn-Activated Y2O3–GeO2 Phosphors for Thin-Film Electroluminescent Devices

Cited by 13 publications

References 6 publications

Photoluminescence Properties of Eu[sup 3+]-Activated Y[sub 2]GeO[sub 5] Phosphors

Photoluminescence Properties of Eu[sup 3+]-Activated Y[sub 2]GeO[sub 5] Phosphors

Rietveld refinement of Y2GeO5

Electroluminescent characteristics of ZnGa2O4:Dy3+ thin film devices fabricated on glass substrates

Contact Info

Product

Resources

About

Mn-Activated Y₂O₃–GeO₂ Phosphors for Thin-Film Electroluminescent Devices

Rietveld refinement of Y₂GeO₅

Electroluminescent characteristics of ZnGa₂O₄:Dy³⁺ thin film devices fabricated on glass substrates