2013
DOI: 10.1016/j.cpc.2013.07.011
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MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion

Abstract: In this work we introduce the Object Kinetic Monte Carlo (OKMC) simulator MMonCa and simulate the defect evolution in three different materials. We start by explaining the theory of OKMC and showing some details of how such theory is implemented by creating generic structures and algorithms in the objects that we want to simulate. Then we successfully reproduce simulated results for defect evolution in iron, silicon and tungsten using our simulator and compare with available experimental data and similar simul… Show more

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Cited by 108 publications
(100 citation statements)
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“…It allows one to follow relatively large systems (of the u,m 3 order) in timescales as long as hours-days. We have used the new code MMonCa [14], presented at COSIRES 2012, for the comparison of 3 keV He-irradiated W in continuous and pulsed modes at different temperatures. The results clearly indicate that in fact He retention is significantly higher in the case of pulsed irradiation, provided the temperature is high enough (>700 K) to enable vacancy motion.…”
Section: Introductionmentioning
confidence: 99%
“…It allows one to follow relatively large systems (of the u,m 3 order) in timescales as long as hours-days. We have used the new code MMonCa [14], presented at COSIRES 2012, for the comparison of 3 keV He-irradiated W in continuous and pulsed modes at different temperatures. The results clearly indicate that in fact He retention is significantly higher in the case of pulsed irradiation, provided the temperature is high enough (>700 K) to enable vacancy motion.…”
Section: Introductionmentioning
confidence: 99%
“…The shape of vacancy clusters is considered to be irregular, depending on the positions of their constituent vacancies. 32 Considering that the ground state (GS) configurations of clusters with up to 6 carbon atoms are mostly parallel to the {111} plane, 63 we model them as disc-shaped planar defects parallel to the plane.…”
Section: Clustering Between Point Defects and The Growth And The Shrimentioning
confidence: 99%
“…29 Based on the energies of point defects in Table I and the parameters in Table II, point defect reactions are treated by the methods described in Ref. 32.…”
Section: Reactions Between Point Defectsmentioning
confidence: 99%
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