XFe4Ge2(X=Y,Lu) and

Abstract

Magnetism, coupled with nontrivial band topology, can bring about many interesting and exotic phenomena, so that magnetic topological materials have attracted persistent research interest. However, compared with non-magnetic topological materials (TMs), the magnetic TMs are less studied, since their magnetic structures and topological phase transitions are usually complex and the firstprinciples predictions are usually sensitive on the effect of Coulomb interaction. In this work, we present a comprehensive investigation of XFe4Ge2 (X = Y, Lu) and Mn3Pt, and find these materials to be filling-enforced magnetic topological metals. Our first-principles calculations show that XFe4Ge2 (X = Y, Lu) host Dirac points near the Fermi level at high symmetry point S. These Dirac points are protected by P T symmetry (P and T are inversion and time-reversal transformations, respectively) and a 2-fold screw rotation symmetry. Moreover, through breaking P T symmetry, the Dirac points would split into Weyl nodes. Mn3Pt is found to host 4-fold degenerate band crossings in the whole high symmetry path of A-Z. We also utilize the GGA + U scheme to take into account the effect of Coulomb repulsion and find that the filling-enforced topological properties are naturally insensitive on U .

An experimental study on the physical and mechanical properties of B4C/PI/AA6061 hybrid composites with various concentrations

“…7c). The pretreated layer is solidified together with the PI mixed glue via molecular diffusion to form a good interfacial bonding [28], as presented in Fig. 7d.…”

The Reactivity of Enantiopure (S)‐6‐Oxopipecolic Acid and Corresponding Pyridoisoquinolines Under Acidic Conditions

“…The latter was previously obtained in a domino process consisting of a CuI-catalyzed coupling (2-bromophenyl)methanamine (27) and cyclohexane-1,3-dione (28) followed by spontaneous oxidation. [46] Since the characterization of 25 in its first report was not complete, the structure of this product was then established by Xray crystallographic analysis among others (Figure 8). [47] Similarly, the oxidation of the minor product, acid hydrochloride 22, by using oxygen as an oxidant (Scheme 13) resulted in the formation of 4-(4-hydroxyisoquinolin-3-yl)-butanoic acid (26B) as the thermodynamically stable product via the imine-one 26A (71 % yield).…”

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn2S4 Photoanode toward Improved Photoelectrochemical Water Splitting

“…Among various metal sulfides, CdIn 2 S 4 is a well-studied n-type semiconductor with a band gap of ≈2.5 eV. [20][21][22][23][24][25][26] Its suitable band edge positions make it suitable as photoanode in PEC water splitting. [27][28][29][30][31] Herein, we select CdIn 2 S 4 as a model photoelectrode and utilize a facile magnetron ion-sputtering method to fabricate TiO 2 and NiO layers to modify double sides of CdIn 2 S 4 photoanode.…”