2015
DOI: 10.1103/physrevb.91.165205
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ΔBmechanism for fringe-field organic magnetoresistance

Abstract: Fringe fields emanating from magnetic domain structures can give rise to magnetoresistance in organic semiconductors. In this article, we explain these magnetic-field effects in terms of a B mechanism. This mechanism describes how variations in magnetic-field strength between two polaron hopping sites can induce a difference in precessional motion of the polaron spins, leading to mixing of their spin states. In order to experimentally explore the fringe-field effects, polymer thin-film devices on top of a roug… Show more

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Cited by 7 publications
(11 citation statements)
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References 22 publications
(42 reference statements)
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“…30 The second term gΔB is referred to as the ΔB mechanism, where ΔB is the difference of magnetic field at two adjacent sites, resulting in different spin precession rates causing the spin mixing between singlet states and triplet states. 18,40 Without MNPs, the spin mixing rate is proportional to ∆𝐵 = |∆𝑩 𝑵 |, where ∆𝑩 𝑵 is the nuclear field gradient (Fig. 6a).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…30 The second term gΔB is referred to as the ΔB mechanism, where ΔB is the difference of magnetic field at two adjacent sites, resulting in different spin precession rates causing the spin mixing between singlet states and triplet states. 18,40 Without MNPs, the spin mixing rate is proportional to ∆𝐵 = |∆𝑩 𝑵 |, where ∆𝑩 𝑵 is the nuclear field gradient (Fig. 6a).…”
Section: Resultsmentioning
confidence: 99%
“…Most recently, Wang et al 39 and Cox et al 40 have demonstrated a method of introducing a randomly localized magnetic field by using the magnetic fringe field of an additional ferromagnetic thin film positioned in the proximity of the OSEC film. Although the magnetic fringe field unambiguously interferes with the hyperfine field to distort the OMAR response, the line shape of the original OMAR response caused by HFI changes significantly.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, any explanation for the MR(B) response in the OSV-like device based on an intrinsic MR effect, such as organic MR (OMAR) [34] in the Feq3 layer, may be excluded. Other explanations such as B mechanism [35] can be also ruled out because of the absence of fringe field from the NiFe electrode, which exhibits uniform in-plane magnetization (confirmed by SQUID measurement below in Fig. 3a).…”
Section: A Magnetoresistance Measurementsmentioning
confidence: 99%
“…Engineered fringe field was first mentioned in MFE response of Alq 3 -based OLED having a structured FM electrode . Subsequently, magnetic fringe field control of the MFE response in OLEDs have been studied using different FM films. Spatially inhomogeneous magnetic fringe field was believed to be responsible for these phenomena. Ref dubbed this mechanism as “Δ B mechanism”.…”
Section: Introductionmentioning
confidence: 99%