2019
DOI: 10.1016/j.nima.2018.08.041
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50μmthin Low Gain Avalanche Detectors (LGAD) for timing applications

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Cited by 24 publications
(9 citation statements)
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“…By means of an iterative process, the thicknesses of both layers have been adjusted to obtain the best fitting calibration line for all experimental data (simulated deposited energy in Si vs centroid of the peaks). The values obtained, 1.5 µ m Al and 48 µ m Si, agree with those supplied by the IMB-CNM group (1.5 µ m Al and 44 µ m active volume + 4 µ m multiplication layer [14]). Through this iterative process, the calibration curve of the Multichannel Analyzer was also found (as shown in Figure 9).…”
Section: Detector Homogeneity and Structuresupporting
confidence: 88%
See 1 more Smart Citation
“…By means of an iterative process, the thicknesses of both layers have been adjusted to obtain the best fitting calibration line for all experimental data (simulated deposited energy in Si vs centroid of the peaks). The values obtained, 1.5 µ m Al and 48 µ m Si, agree with those supplied by the IMB-CNM group (1.5 µ m Al and 44 µ m active volume + 4 µ m multiplication layer [14]). Through this iterative process, the calibration curve of the Multichannel Analyzer was also found (as shown in Figure 9).…”
Section: Detector Homogeneity and Structuresupporting
confidence: 88%
“…The samples studied in this work are a PIN and a LGAD detector manufactured by the Centro Nacional de Microelectrónica (IMB-CNM-CSIC) [14]. Both detectors come from the same wafer and underwent the same fabrication process and are identical except for the p + implant (gain layer) in the case of the LGAD.…”
Section: Lgadsmentioning
confidence: 99%
“…The radiation lengths for Si (X Si 0 =93.7 mm) and copper (X Cu 0 =14.36 mm) were extracted from [21] and FR4 (X FR4 0 =167.608 mm) from [22]. Standard LGAD sensors typically consist of a 300-350 µm thick silicon layer [23], which corresponds to a material budget of ≈ 0.32-0.37 % X/X 0 . Depending on the detector technology, the silicon sensor can also be mounted on a PCB.…”
Section: Setup Geometrymentioning
confidence: 99%
“…In the so-called inverse LGAD (iLGAD) concept, on the other hand, the n+ electrode and the underlying gain layer are kept uniform entirely, and the segmentation is instead implemented at the p + ohmic contact electrode [22,23]. Another related line of research are capacitively (AC) coupled…”
Section: Pos(vertex2019)028mentioning
confidence: 99%