<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>in GaP studied by Fourier-transform emission and absorption spectroscopy

Rückert, G.; Pressel, K.; Dörnen, A.; Thonke, Klaus; Ulrici, W.

doi:10.1103/physrevb.46.13207

Cited by 21 publications

(21 citation statements)

References 12 publications

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“…In the present section we analyse the most recent high-resolution data of Pressel et al [7] on InP:Fe 2+ and of Rückert et al [9] on GaP:Fe 2+ in the framework of the theoretical model described in section 2. Most previous theoretical papers have focused on the interpretation of the emission spectrum related to electric-dipole transitions from the 5 spin-orbit-split state (see figure 1) to the ground state 1 .…”

Section: Discussion and Comparison Between Theory And Experimentsmentioning

confidence: 99%

“…A large number of theoretical [10][11][12] and experimental [6][7][8][9] investigations have been devoted to the study of the 2+ charge state of iron in III-V semiconductors such as InP, GaP and GaAs.…”

Section: Discussion and Comparison Between Theory And Experimentsmentioning

confidence: 99%

“…Much more detailed studies of the optical absorption spectra of Fe-doped III-V materials were performed and additional lines linked to internal transitions of the Fe 2+ levels were observed. In addition a fine structure originating from different iron isotopes has also been resolved [9].…”

Section: Introductionmentioning

confidence: 99%

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The effect of electron-phonon interaction in iron-doped III-V cubic semiconductors

Colignon

Kartheuser

Villeret

2000

J. Phys.: Condens. Matter

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Abstract.A theoretical study of optical absorption and emission measurements of Fe 2+ as a substitutional impurity in InP and GaP is presented. A new interpretation of the low-temperature absorption spectrum is proposed based on a weak Jahn-Teller interaction between the electronic excited states and a local gap mode of 5 symmetry. The model also includes the crystal potential, hybridization with the orbitals of the ligands of the host crystal, spin-orbit interaction and a weak dynamic Jahn-Teller coupling of the orbital ground state of Fe 2+ with transverse acoustic phonons of 3 symmetry. The theoretical model describes with good accuracy the measured positions and relative intensities of the spectral lines. In addition, the mass dependence of the local gap mode of 5 symmetry reproduces the general features of the fine structures associated with the isotopic shifts of the zero-phonon line and the contribution to the isotopic shifts arising from the difference in zero-point energy between the initial and final states of the transition is evaluated.

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Section: Discussion and Comparison Between Theory And Experimentsmentioning

confidence: 99%

Section: Discussion and Comparison Between Theory And Experimentsmentioning

confidence: 99%

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The effect of electron-phonon interaction in iron-doped III-V cubic semiconductors

Colignon

Kartheuser

Villeret

2000

J. Phys.: Condens. Matter

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“…[20][21][22][23] is attributed to a transition within the ground term of doubly ionized iron substituting group III elements at random sites of symmetry Td. In the framework of crystal-field theory, the ground term 5 D of the free ion splits into doublet ( 5 Γ 3 ) and triplet ( 5 Γ 5 ) orbital multiplets, separated by energy Δ, the former lying below the latter.…”

Section: Theoretical Formalismmentioning

confidence: 99%

“…Prior to 1985 [19], no isotopic effect had been observed in the near infrared absorption spectra of iron-doped InP, GaAs or GaP. Present FTIR spectroscopy has permitted the observation of fine structures in InP:Fe [20,21], GaP:Fe [22], and GaAs:Fe [23] which are attributed to the zero-phonon lines of the four stable isotopes of iron present in the sample in their natural abundances [ 54 Fe (5.82%), 56 Fe (91.18%), 57 Fe (2.1%), and 58 Fe (0.28%) [24]] and have intensities in similar proportions. The lines appear in order of increasing isotopic mass, the transition for 54 Fe being the lowest in energy.…”

Section: Introductionmentioning

confidence: 99%

Isotope splitting of the zero-phonon line of Fe2+ in cubic III–V semiconductors

Colignon

Mailleux

Kartheuser

et al. 1998

Solid State Communications

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A theoretical study of the isotopic-mass dependence of the internal transitions of Fe 2+ at a cation site in a cubic zinc-blende semiconductor is presented. The model used is based on crystal-field theory and includes the spinorbit interaction and a weak dynamic Jahn-Teller coupling between the 5 Γ 5 excited manifold of Fe 2+ and a local vibrational mode (LVM) of Γ 5 symmetry. The mass dependence of the LVM frequency is described, in the harmonic approximation, within two different limits: the rigid-cage model and a molecular model. In the rigidcage model, the Fe 2+ ion undergoes a displacement but the rest of the lattice is fixed. In this case, a simple M -1l2 dependence of the frequency is obtained and the Jahn-Teller energy, E JT is independent of the mass. In the molecular model, the four nearest neighbors of the magnetic ion are allowed to move and the LVM then behaves as the Γ 5 mode of a MX 4 tetrahedral molecule leading to a more complicated dependence of the frequency on the isotopic mass and to a mass-dependence of E JT . The theoretical results obtained with these two models are compared with the observed isotopic shifts of the zero-phonon lines in InP:Fe and GaP:Fe corresponding to an optical transition between the vibronic Γ 1 ground state and the lowest Γ 5 state originating from the 5 Γ 5 excited orbital multiplet. A prediction of the isotopic shifts of the zero-phonon line in GaAs:Fe is also presented.

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Fe in III–V and II–VI semiconductors

Malguth

Hoffmann

Phillips

2008

Physica Status Solidi (b)

114

110

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Many theoretical and experimental studies deal with the realization of room‐temperature ferromagnetism in dilute magnetic semiconductors (DMS). However, a detailed quantitative understanding of the electronic properties of transition metal doped semiconductors has often been neglected. This article points out which issues concerning electronic states and charge transfers need to be considered using Fe as an example. Methods to address these issues are outlined, and a wealth of data on the electronic properties of Fe doped III–V and II–VI compound semiconductors that have been obtained over a few decades is reviewed thoroughly. The review is complemented by new results on the effective‐mass‐like state consisting of a hole bound to Fe2+ forming a shallow acceptor state.The positions of established Fe3+/2+ and Fe2+/1+ charge transfer levels are summarized and predictions on the positions of further charge transfer levels are made based on the internal reference rule. The Fe3+/4+ level has not been identified unambiguously in any of the studied materials. Detailed term schemes of the observed charge states in tetrahedral and trigonal crystal field symmetry are presented including hyperfine structure, isotope effects and Jahn–Teller effect. Particularly, the radiative transitions Fe3+(4T1 → 6A1) and Fe2+(5E → 5T2) are analyzed in great detail.An effective‐mass‐like state [Fe2+, h] consisting of a hole bound to Fe2+ is of great significance for a potential realization of spin‐coupling in a DMS. New insights on this shallow acceptor state could be obtained by means of stress dependent and temperature dependent absorption experiments in the mK range. The binding energy and effective Bohr radius were determined for GaN, GaP, InP and GaAs and a weak exchange interaction between the hole and the Fe2+ center was detected.With regard to the Fe3+ ground state, 6A1, in GaP and InP, the hyperfine structure level Γ8 was found to be above the Γ8 level.All results are discussed with respect to a potential realization of a ferromagnetic spin‐coupling in DMSs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Fe2+in GaP studied by Fourier-transform emission and absorption spectroscopy

Cited by 21 publications

References 12 publications

The effect of electron-phonon interaction in iron-doped III-V cubic semiconductors

The effect of electron-phonon interaction in iron-doped III-V cubic semiconductors

Isotope splitting of the zero-phonon line of Fe2+ in cubic III–V semiconductors

Fe in III–V and II–VI semiconductors

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