2008
DOI: 10.1016/j.cplett.2008.05.022
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Mixed silicon–germanium clusters, SixGeyHz, in the gas phase by flash pyrolysis of silane and germane

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Cited by 10 publications
(5 citation statements)
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“…An efficient route to the branched polysilane (H 3 Si) 3 Si-SiMe 3 was reported recently, and this species represents a promising precursor to bulk silicon . Extended tetrelane hydrides containing both Si and Ge centers (e.g., the butane analogue H 3 Ge-SiH 2 –SiH 2 –GeH 3 ) have been developed for CVD, while the deposition of bulk or nanodimensional Ge from volatile germanium hydrides remains an active field of study post-2001. While distannane H 3 Sn-SnH 3 has been prepared, this species is too thermally unstable to be used in a reliable fashion for materials synthesis. , As a result, SnH 4 and its deuterium analogue SnD 4 are commonly employed as part of synthetic protocols to access tin-containing solid state compounds, such as ternary Si x Ge y Sn z semiconductors of controllable composition. …”
Section: Molecular Hydrides Of the Group 14 Metals (Silicon Germanium...mentioning
confidence: 99%
“…An efficient route to the branched polysilane (H 3 Si) 3 Si-SiMe 3 was reported recently, and this species represents a promising precursor to bulk silicon . Extended tetrelane hydrides containing both Si and Ge centers (e.g., the butane analogue H 3 Ge-SiH 2 –SiH 2 –GeH 3 ) have been developed for CVD, while the deposition of bulk or nanodimensional Ge from volatile germanium hydrides remains an active field of study post-2001. While distannane H 3 Sn-SnH 3 has been prepared, this species is too thermally unstable to be used in a reliable fashion for materials synthesis. , As a result, SnH 4 and its deuterium analogue SnD 4 are commonly employed as part of synthetic protocols to access tin-containing solid state compounds, such as ternary Si x Ge y Sn z semiconductors of controllable composition. …”
Section: Molecular Hydrides Of the Group 14 Metals (Silicon Germanium...mentioning
confidence: 99%
“…Despite all of these advancements in the chemistry of homoatomic Zintl ions, primarily Ge- and Sn-based, very little attention has been paid to heteroatomic species. At the same time, it is well-known that, theoretically, the electrical and optical properties of heteroatomic and metal-doped semiconductors can be tailored by varying the composition . The band gap of germanium, for instance, can be adjusted by the incorporation of tin into its structure: this narrows it to direct-band-gap levels of under 0.7 eV at a rate of approximately 12 meV per atomic percent of tin .…”
Section: Introductionmentioning
confidence: 99%
“…At the same time, it is well-known that, theoretically, the electrical and optical properties of heteroatomic and metal-doped semiconductors can be tailored by varying the composition . The band gap of germanium, for instance, can be adjusted by the incorporation of tin into its structure: this narrows it to direct-band-gap levels of under 0.7 eV at a rate of approximately 12 meV per atomic percent of tin . However, the solubility of these elements in each other is extremely low under equilibrium conditions.…”
Section: Introductionmentioning
confidence: 99%
“…The flash pyrolysis experiments were conducted on a homebuilt VUV-PI-TOF-MS apparatus that has been previously described. [17][18][19][20] Samples of CH 3 SiCl 3 (99%) and Si(CH 3 ) 2 Cl 2 (99.5%) were obtained from Sigma-Aldrich. SiHCH 3 Cl 2 (98%) was obtained from Fisher Scientific.…”
Section: Methodsmentioning
confidence: 99%