Mixed-Signal Organic Integrated Circuits in a Fully Photolithographic Dual Threshold Voltage Technology

Nausieda, I.; Ryu, Kevin; He, David Da; Akinwande, Akintunde I.; Bulović, Vladimir; Sodini, C.G.

doi:10.1109/ted.2011.2105489

Cited by 48 publications

(32 citation statements)

References 23 publications

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“…[1][2][3] On the other hand, some examples of low voltage organic devices can also be found in the literature. 2,[4][5][6][7][8][9][10] The reasons behind the need of high supply voltages is the low carrier mobility of p-type organic materials and low performance of printed or vacuum deposited gate dielectrics that have been used. In addition the scarcity of n-type organic semiconductors and p-type inorganic semiconductors leads to missing complementary circuits in both domains, 11 except their realization in hybrid systems.…”

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confidence: 99%

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Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

Marques

Garlapati

Dehm

et al. 2017

Applied Physics Letters

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Printed electronic components offer certain technological advantages over their silicon based counterparts, like mechanical flexibility, low process temperatures, maskless and additive manufacturing possibilities. However, to be compatible to the fields of smart sensors, Internet of Things and wearables, it is essential that devices operate at small supply voltages. In printed electronics mostly silicon dioxide or organic dielectrics with low dielectric constants have been used as gate isolators, which in turn has resulted in high power transistors operable only at tens of volts. Here, we present inkjet printed circuits which are able to operate at supply voltages as low as ≤ 2 V. Our transistor technology is based on lithographically patterned drive electrodes, the dimensions of which are carefully kept well within the printing resolutions; the oxide semiconductor, the electrolytic insulator and the top-gate electrodes have been inkjet printed. Our inverters show a gain of ∼ 4 and 2.3 ms propagation delay time at 1 V supply voltage. Subsequently built 3-stage ring oscillators start to oscillate at a supply voltage of only 0.6 V with a frequency of ∼ 255 Hz and can reach frequencies up to ∼ 350 Hz at 2 V supply voltage. Furthermore, we have introduced a systematic methodology for characterizing ring oscillators in the printed electronics domain, which has been largely missing. Benefiting from this procedure, we are now able to predict the switching capacitance and driver capability at each stage, as well as the power consumption of our inkjet printed ring oscillators. These achievements will be essential for analyzing the performance and power characteristics of future inkjet printed digital circuits.The application domains such as Internet of Things (IoT), smart sensors and wearables may benefit from printed electronics (PE) technology where the devices can be printed onto flexible or rigid substrates. Most of the devices in PE, are based on organic materials and suffer from high supply voltage requirements (> 10 V). 1-3 On the other hand, some examples of low voltage organic devices can also be found in the literature. 2,4-10 The reasons behind the need of high supply voltages is the low carrier mobility of p-type organic materials and low performance of printed or vacuum deposited gate dielectrics that have been used. In addition the scarcity of n-type organic semiconductors and p-type inorganic semiconductors leads to missing complementary circuits in both domains, 11 except their realization in hybrid systems. 2,12 Lithographically patterned ring oscillator structures based on organic field-effect transistors (OFETs) are able to perform at high frequency (200 kHz) but at the same time require high supply voltage (-60 V). printed, based on OFETs operate at high supply voltages (∼ −40 V) with frequencies below 5 Hz. 14,15 An OFET based 11-stage ring oscillator operating at only 3 V supply with a frequency of 1.7 Hz was also reported in literature. 7 By using an complementary design, the frequency was increase...

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“…14,15 An OFET based 11-stage ring oscillator operating at only 3 V supply with a frequency of 1.7 Hz was also reported in literature. 7 By using an complementary design, the frequency was increased to ∼ 22 Hz. 5 Xia et al achieved reasonable performance (∼ 150 Hz) at 2 V supply voltage with ring oscillators based on electrolyte-gated OFETs.…”

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confidence: 99%

Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

Marques

Garlapati

Dehm

et al. 2017

Applied Physics Letters

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“…A possibility relevant to unipolar technologies is to load a singleinput amplifier with a transistor biased with zero gate-source voltage, a configuration known as zero-vgs load (Figure 3.3a). This approach has received some attention in unipolar technologies as a way to achieve large load resistance and gain [118]. A transistor biased at V GS ¼ 0 V is normally operating in its subthreshold region, hence its output resistance is extremely high.…”

Section: Single-input Amplifiersmentioning

confidence: 99%

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Pecunia

Fattori

Abdinia

et al. 2018

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Recent years have witnessed significant research efforts in flexible organic and amorphous-metal-oxide analogue electronics, in view of its formidable potential for applications such as smart sensor systems. This Element provides a comprehensive overview of this growing research area. After discussing the properties of organic and amorphous-metal-oxide technologies relevant to analogue circuits, this Element focuses on their application to two key circuit blocks: amplifiers and analogue-to-digital converters. The Element thus provides a fresh look at the evolution and immediate opportunities of the field, and identifies the remaining challenges for these technologies to become the platform of choice for flexible analogue electronics.

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“…Requirements for such devices include small size for high-resolution signal mapping, low-voltage operation for mobility and safe use, and appropriate bandwidth for a reliable representation of signal information. While the fi rst two requirements have been previously demonstrated separately, [ 12,13 ] the frequency response of organic amplifi ers is still a main challenge to be addressed.…”

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confidence: 99%

High‐Frequency, Conformable Organic Amplifiers

et al. 2016

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Large-bandwidth, low-operation-voltage, and uniform organic amplifiers are fabricated on ultrathin foils. By the integration of short-channel OTFTs and AlOx capacitors, organic amplifiers with a bandwidth of 25 kHz are realized, demonstrating the highest gain-bandwidth product (GBWP) reported to date. Owing to material and process advancements, closed-loop architectures operate at frequencies of several kilohertz with an area smaller than 30 mm(2) .

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Mixed-Signal Organic Integrated Circuits in a Fully Photolithographic Dual Threshold Voltage Technology

Cited by 48 publications

References 23 publications

Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

High‐Frequency, Conformable Organic Amplifiers

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