Mixed proton and electron conduction in graphene oxide films: field effect in a transistor based on graphene oxide

Смирнов, В. А.; Mokrushin, A. D.; Vasiliev, V. P.; Денисов, Н. Н.; Denisova, K. N.

doi:10.1007/s00339-016-0039-2

Cited by 12 publications

(3 citation statements)

References 30 publications

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“…On the contrary, a pre-applied +40 V gate pulse can induce a hole-rich device. Besides, Smirnov et al [274] reported a method to change the carrier conduction of RGO by altering the relative humidity. It was found that in ambient conditions with a relative humidity of 7 %, the partially reduced GO films exhibit electronic conductivity.…”

Section: Field-effect Transistors (Fets)mentioning

confidence: 99%

Physical properties and device applications of graphene oxide

2020

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Graphene oxide (GO), the functionalized graphene with oxygenated groups (mainly epoxy and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface area, superior physical and chemical properties, and easy composition with other materials via surface functional groups. Usually, GO is used as an important raw material for mass production of graphene via reduction. However, under different conditions, the coverage, types, and arrangements of oxygencontaining groups in GO can be varied, which give rise to excellent and controllable physical properties, such as tunable electronic and mechanical properties depending closely on oxidation degree, suppressed thermal conductivity, optical transparency and fluorescence, and nonlinear optical properties. Based on these outstanding properties, many electronic, optical, optoelectronic, and thermoelectric devices with high performance can be achieved on the basis of GO. Here we present a comprehensive review on recent progress of GO, focusing on the atomic structures, fundamental physical properties, and related device applications, including transparent and flexible conductors, field-effect transistors, electrical and optical sensors, fluorescence quenchers, optical limiters and absorbers, surface enhanced Raman scattering detectors, solar cells, light-emitting diodes, and thermal rectifiers.

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Section: Field-effect Transistors (Fets)mentioning

confidence: 99%

Physical properties and device applications of graphene oxide

2020

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“…The reduction of oxygen functional groups leads to decreased ionic conductivity and the simultaneous recovery of sp 2 structure assists the electronic conductivity. It has to be stressed that the task of this paper is to investigate [22] and Smirnov et al [23] for devices which exhibited mixed ionic/electronic conduction. Our devices demonstrate low power consumption (e.g.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the H₂O Sensing Mechanism of DC-Operated Chemiresistors Based on Graphene Oxide and Thermally Reduced Graphene Oxide

et al. 2019

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Graphene oxide (GO) is a promising material for H 2 O vapour sensing. However, H 2 O sensing mechanisms are still under investigation especially in the case of thermally reduced GO. To this purpose, planar devices were fabricated by spincoating graphene oxide on glass substrates. Ultra high response to H 2 O was recorded but poor repeatability and stability over time were also noted. Three different degrees of thermal reduction were applied to improve material stability. An inverse change of resistance was observed for reduced graphene oxide compared to pure graphene oxide upon interaction with H 2 O. The sensing mechanisms that govern GO and reduced GO behaviour were studied based on DC measurements. In the case of GO, strong ionic conductivity was proposed whereas in the case of reduced GO mixed electronic/ionic with the leading mechanism affected by H 2 O percentage in air, degree of material reduction and sensor working temperature. Finally, it was found that by promoting one sensing mechanism over the other, improved operating humidity range of the sensor can be achieved.

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“…On the other hand, GO itself is a promising material for various applications. As a proton conductor GO is applied in humidity sensors [10,14], in supercapacitors [15][16], as well as in a fieldeffect transistor [10,17], and nano composite membranes [18][19][20][21]. There is a possibility to integrate GO in graphene electronic devices [22].…”

Section: Introductionmentioning

confidence: 99%

A Review on the Conductive Properties of Graphene Oxide Films

2019

International Journal of Advanced Research in Chemical Science

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The behavior of interlayer water was studied in detail for graphite oxide [24-26]. By using neutron scattering, it has been shown [24] that, in the interlayer space, water may exist at high humidity in two forms: translational motion capable form and translational motion incapable one. The interlayer distance in graphite oxide was found [25] to abruptly change in the vicinity of freezing point. Talyzin et al. [25] have also established the presence of two types of water in the interlayer space of graphite oxide. The same conclusion was also reached by Zhu et al. [26] who investigated the thermal expansion of graphene layers and explained the negative thermal effect by reversible diffusion of free Abstract: Current-voltage characteristics of graphene oxide (GO) films were explored in water vapor as a function of water content in the film. The films can contain free and bound water. A decrease in current with time at a constant voltage is associated with the decrease in water content. Reduced GO (rGO) films exhibited proton and electron conductivity. For the proton conductivity E a = 0.9 eV, for the electron conductivity induced by thermolysis and chemical exposure E a = 1.15 eV. The rGO films is an example of mixed electron-proton conductivity when material conductivity can be regulated by external conditions. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated. The possibility of accumulation and storage of electric charge in Nafion and GO films was demonstrated for the first time. The storage is governed by humidity of ambient environment. Charge accumulation occurs directly in Nafion or GO films.

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Mixed proton and electron conduction in graphene oxide films: field effect in a transistor based on graphene oxide

Cited by 12 publications

References 30 publications

Physical properties and device applications of graphene oxide

Physical properties and device applications of graphene oxide

Investigation of the H₂O Sensing Mechanism of DC-Operated Chemiresistors Based on Graphene Oxide and Thermally Reduced Graphene Oxide

A Review on the Conductive Properties of Graphene Oxide Films

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Mixed proton and electron conduction in graphene oxide films: field effect in a transistor based on graphene oxide

Cited by 12 publications

References 30 publications

Physical properties and device applications of graphene oxide

Physical properties and device applications of graphene oxide

Investigation of the H2O Sensing Mechanism of DC-Operated Chemiresistors Based on Graphene Oxide and Thermally Reduced Graphene Oxide

A Review on the Conductive Properties of Graphene Oxide Films

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Investigation of the H₂O Sensing Mechanism of DC-Operated Chemiresistors Based on Graphene Oxide and Thermally Reduced Graphene Oxide