2010
DOI: 10.1016/j.jcrysgro.2010.05.037
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Mixed-phase solidification of thin Si films on SiO2

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Cited by 28 publications
(22 citation statements)
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“…Promising results have been reported with large grain size ($5 mm), nearly 100% (100) oriented, low intragrain defect density poly-Si lms being formed on quartz substrates as shown in Figure 3.6. 36 The data is for a 130 nm thick a-Si lm on quartz processed using a CW laser operating at 532 nm.…”
Section: Seed Layer Formation By Laser Crystallisationmentioning
confidence: 99%
“…Promising results have been reported with large grain size ($5 mm), nearly 100% (100) oriented, low intragrain defect density poly-Si lms being formed on quartz substrates as shown in Figure 3.6. 36 The data is for a 130 nm thick a-Si lm on quartz processed using a CW laser operating at 532 nm.…”
Section: Seed Layer Formation By Laser Crystallisationmentioning
confidence: 99%
“…[10] At NREL, we have successfully replicated the MPS grain structure with an epitaxial silicon absorber. Initial solar cells on these devices are 2.2% efficient and show near-ideal quantum efficiency from the bulk of a 1 µm thick absorber.…”
Section: First Solar Cells On Low-cost Seedsmentioning
confidence: 99%
“…However, the thickness is not sufficient to deliver a good performance for thin film solar cells where a ~ 2 μm thick film is required. Conventionally, crystallization of thicker Si layer is achieved either by layer laser crystallization which requires repetitive sequential deposition and laser annealing of thin a-Si layers [147] or by laser annealing of an a-Si seed layer, followed by epitaxial growth [138]. These processes usually require special equipment configuration and are costly.…”
Section: Motivationmentioning
confidence: 99%
“…Therefore, an alternative efficient approach of using diode pumped solid state (DPSS) Nd:YVO 4 UV laser has been pursued [134]. The crystallization mechanism is as follows: (i) there is a laser processing window where the power intensity of the optical beam is sufficient to melt the Si films and a stage of coexistence of solid and liquid regions can be sustained [137], as explained in the previous section, (ii) the crystallization then follows the SLS process in which generated Si crystal seeds can be dragged epitaxially in the desired lateral direction [127,138], and (iii) further lateral growth of the previously formed grains via epitaxial growth could possibly be attained by properly adjusting the relative position between the sample and incident beam [133].…”
Section: Introductionmentioning
confidence: 99%
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