Mixed Phase (GaIn)2O3 Films with a Single Absorption Edge Grown by Magnetron Sputtering

Zhang, Fabi; Sun, Jinyu; Li, Haiou; Juan, Zhou; Sun, Tangyou; Fu, Tao; Xiao, Gongli; Chen, Yonghe; Deng, Yanrong; Jianghui, Zhai

doi:10.1007/s11664-019-07645-1

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…The target was a ceramic of (GaIn) 2 O 3 with an In 2 O 3 weight ratio of 30 wt % (99.99% pure). The substrate clean process and other grown parameters are similar to our previous work . Postannealing was carried out at temperatures of 700, 800, 900, 1000, and 1100 °C in air.…”

Section: Methodsmentioning

confidence: 99%

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Postannealed (GaIn)₂O₃ Films Deposited by Sputtering for Ultraviolet Photodetection

Zhang

Juan

et al. 2022

ACS Appl. Electron. Mater.

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In this work, we demonstrated that thermal-annealed (GaIn)2O3 films deposited by sputtering can be used for UV detector applications. X-ray diffractometer measurement shows that the (GaIn)2O3 film annealed at 900 °C possesses the best crystal orientation. All annealed (GaIn)2O3 films have a high transmittance of over 80% in the visible light region measured by a spectrometer. The photoresponse of the (GaIn)2O3 film-based photodetectors was affected by the annealing temperature. A film annealed at 800 °C possesses high photosensitivity (2.5 × 104), high photoresponsivity (16.9 A/W), as well as high detectivity (3.11 × 1011 Hz1/2 W–1) at 5 V bias under 254 nm illumination. The photoresponsivity has been improved through thermal annealing. However, further increasing the annealing temperature from 700 to 1100 °C decreased the photoresponsivity. The decay/rise time reduced obviously after thermal annealing. Both the variation of photoresponsivity and response time should concern with the variation of oxygen vacancies. This work is helpful for the preparation of a (GaIn)2O3-based ultraviolet photodetector and the improvement of its response speed and responsivity.

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Section: Methodsmentioning

confidence: 99%

“…The substrate clean process and other grown parameters are similar to our previous work. 11 Postannealing was carried out at temperatures of 700, 800, 900, 1000, and 1100 °C in air.…”

Section: Methodsmentioning

confidence: 99%

Postannealed (GaIn)₂O₃ Films Deposited by Sputtering for Ultraviolet Photodetection

Zhang

Juan

et al. 2022

ACS Appl. Electron. Mater.

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The spontaneous polarization of In-doped κ-Ga2O3 by first-principles calculation

et al. 2022

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The crystal structure, band structure, density of states, and optical properties of κ-(Ga1−xInx)2O3 (x = 0, 0.125, 0.25, 0.5) were studied using the first-principles calculation based on the density functional theory. With the increase of In content x, the bandgap of κ-(Ga1−xInx)2O3 decreases, while the light absorption coefficient increases. The spontaneous polarization of κ-(Ga1−xInx)2O3 was calculated qualitatively using the Born effective charge. The results suggested that κ-(Ga1−xInx)2O3 is also a material with spontaneous polarization properties. The spontaneous polarization in the extended c-axis has increased 1.27 times, from 27.31 to 34.58 μC/cm2, with the increase of In content from 0 to 0.5. This work paves the way for modulating spontaneous polarization of wide bandgap semiconductors. It provides a theoretical basis for the potential application of κ-(Ga1−xInx)2O3 in high electron mobility transistors, quantum well-infrared photodetectors, and photovoltaic materials.

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Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering

Zhang

Sun

et al. 2021

Front Inform Technol Electron Eng

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Mixed Phase (GaIn)2O3 Films with a Single Absorption Edge Grown by Magnetron Sputtering

Cited by 3 publications

References 21 publications

Postannealed (GaIn)₂O₃ Films Deposited by Sputtering for Ultraviolet Photodetection

Postannealed (GaIn)₂O₃ Films Deposited by Sputtering for Ultraviolet Photodetection

The spontaneous polarization of In-doped κ-Ga2O3 by first-principles calculation

Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering

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Mixed Phase (GaIn)2O3 Films with a Single Absorption Edge Grown by Magnetron Sputtering

Cited by 3 publications

References 21 publications

Postannealed (GaIn)2O3 Films Deposited by Sputtering for Ultraviolet Photodetection

Postannealed (GaIn)2O3 Films Deposited by Sputtering for Ultraviolet Photodetection

The spontaneous polarization of In-doped κ-Ga2O3 by first-principles calculation

Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering

Contact Info

Product

Resources

About

Postannealed (GaIn)₂O₃ Films Deposited by Sputtering for Ultraviolet Photodetection

Postannealed (GaIn)₂O₃ Films Deposited by Sputtering for Ultraviolet Photodetection