Mixed phase formation of SnS-SnO2 on air-annealed thermally evaporated SnS thin films

Jain, Dharmendra; Kumar, Sanjeev; Pal, Anand; Agrawal, Shashwat

doi:10.1016/j.tsf.2023.139973

Cited by 2 publications

(1 citation statement)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Jain et al observed that SnS thin film transformed a mixed-phase structure of SnS-SnO 2 when subjected to air annealing at higher temperatures [24]. Zaki et al documented the conversion of SnS into a composite of MTO-Sn 2 S 3 at higher annealing temperatures in the presence of ambient air for a duration of 30 min [25].…”

Section: Introductionmentioning

confidence: 99%

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Nisha,

Sarkar,

Kumar

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

Tin sulfide (SnS) has attracted significant interest due to its advantageous optoelectrical characteristics and abundant presence in nature. Post-deposition treatments (PDTs) are frequently employed to enhance the crystallinity of chalcogenide-based solar cells. This study examined the influence of the post-deposition heat treatment procedure on thermally evaporated SnS thin film. The post-deposition annealing process, as determined by XRD and AFM studies, supplies the necessary thermal energy for re-crystallization, potentially resulting in a modification of crystallite dimensions. The occurrence of Sn-S polytypes was examined using Raman and XPS studies. Annealing causes changes in the optical properties, as observed through optical analysis, which can be attributed to the improvement in crystallinity. Subjecting the material to annealing at temperature of 300 °C greatly improves both mobility and conductivity, while also causing a change in conduction type. The observed variations in conduction type are attributed to the differing ratios between the amounts of Sn2+ and Sn4+. This strategy offers a novel route for the fabrication of thin-film photovoltaic cells by using a p-type buffer layer.

show abstract

Section: Introductionmentioning

confidence: 99%