Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices 1990
DOI: 10.1007/978-3-0348-5698-0_18
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Mixed FEM for Δu = αu

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(3 citation statements)
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“…Special quadrature rules ensure that the mass matrix has exactly the right properties, and proofs can be given that the coefficient matrix of the system for the unknown potentials and/or carrier concentrations has the M-property. This has been described in detail in [65,67]. A remaining problem is that, in the case of a triangular mesh, the triangles must all be non-obtuse.…”
Section: Non-standard Mixed Finite Element Methodsmentioning
confidence: 99%
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“…Special quadrature rules ensure that the mass matrix has exactly the right properties, and proofs can be given that the coefficient matrix of the system for the unknown potentials and/or carrier concentrations has the M-property. This has been described in detail in [65,67]. A remaining problem is that, in the case of a triangular mesh, the triangles must all be non-obtuse.…”
Section: Non-standard Mixed Finite Element Methodsmentioning
confidence: 99%
“…This has been done in [60] and [61], leading in the latter case to the frequently used Raviart-Thomas elements. Applications to semiconductor device problems started about 1987 in, for example, [15,62,63], with important and necessary improvements developed in [64][65][66][67][68]. Independently, a different type of mixed finite element method using inverse averages was developed in [56,69].…”
Section: Extension To Higher Dimensionsmentioning
confidence: 99%
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