Mixed-dimensional PdSe<sub>2</sub>/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing

Wu, Di; Cheng, Jung An; Shi, Fenghua; Zeng, Longhui; Lin, Pei; Dong, Lin; Shi, Zhifeng; Tian, Yongtao; Li, Xinjian; Jie, Jiansheng

doi:10.1039/c9ta13611h

Cited by 165 publications

(104 citation statements)

References 68 publications

(73 reference statements)

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“…[9][10] Early research mainly focused on 1D atoms to constitute a series of low-symmetry pentagonal unit rings, [22] thus the strong intralayer anisotropy and exotic angleresolved properties of PdSe 2 can be expected. [25,28] Recently, 2D PdSe 2 flakes were reported to have the ability to detect polarized light, and had the potential to serve as a LD conversion medium, [29][30][31][32][33] making it distinct advantages for studying the orientation modulation for polarization detection. To date, a comprehensive research of the puckered pentagonal structureproperty relations of 2D PdSe 2 and its unique orientation selectivity for polarized photodetection have not been fully revealed experimentally.…”

Section: Introductionmentioning

confidence: 99%

Highly In‐Plane Anisotropic 2D PdSe₂ for Polarized Photodetection with Orientation Selectivity

Shen

et al. 2020

Adv Funct Materials

115

114

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Polarized photodetection based on anisotropic two-dimensional materials display promising prospects for practical application in optical communication and optoelectronic fields. However, most of the reported polarized photodetection are limited by the lack of valid tunable strategy and low linear dichroism ratio. A peculiar noble metal dichalcogenide-PdSe 2 with a puckered pentagonal structure and abnormal linear dichroism conversion-potentially removes these restrictions and is demonstrated in this study. Herein, azimuthdependent reflectance difference microscopy combined with anisotropic electrical transport measurements indicate strong in-plane anisotropic optical and electrical properties of two-dimensional PdSe 2. Remarkably, the typical polarization-resolved photodetection exhibits anisotropic photodetection characteristics with a dichroic ratio up to ≈1.8 at 532 nm and ≈2.2 at 369 nm, and their dominant polarization orientation differs by 90° corresponding to the a-axis and b-axis, respectively. The unique orientation selection behavior in polarizationdependent photodetection can be attributed to the intrinsic linear dichroism conversion. The results make 2D PdSe 2 a promising platform for investigating anisotropic structure-property correlations and integrated optical applications for novel polarization-sensitive photodetection.

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Section: Introductionmentioning

confidence: 99%

Highly In‐Plane Anisotropic 2D PdSe₂ for Polarized Photodetection with Orientation Selectivity

Shen

et al. 2020

Adv Funct Materials

115

114

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“…In the last decades, group-6 TMDCs (such as MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 ) which occur naturally in the 2H phase have attracted the most attention [18][19][20][21][22]. However, group-10 TMDCs (such as PtSe 2 , PtS 2 , PdSe 2 , and PdS 2 ) which occur naturally in the 1T phase have been theoretically predicted as an outstanding material [23][24][25][26][27][28][29][30]. In addition, experimentally demonstrated distinct properties of group-10 TMDCs have made it prominent than other state-of-the-art 2D materials.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

et al. 2020

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HIGHLIGHTS • A comprehensive review of the recent development of two-dimensional (2D) PtSe 2 synthesis strategies has been extensively surveyed. • The applications of 2D PtSe 2 materials in areas, including opto/electric devices, photocatalysis, hydrogen evolution reaction, and sensors, have been reviewed. • Current challenges in the development of 2D PtSe 2 materials are identified, and outlooks toward unexplored research areas are suggested.

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“…Consequently, a built-in potential at Cr-GeSe interface increased, this selective barrier at the junction is the means of separating charges during electron-holes generation under illumination 18,59 . It is the key to the production of a photovoltaic electric current [60][61][62] . Therefore, upon illumination of NIR wavelength of 850 nm with a power of 76 mWcm −2 yielding the greater photovoltaic current with an increase of Vg from 0 V to 40 V without external power.…”

Section: Resultsmentioning

confidence: 99%

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Hussain

Aftab

Jaffery

et al. 2020

Sci Rep

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2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e. ~220, ~530 and ~850 nm). The device exhibited promising figures of merit required for efficient photodetection, specifically the Schottky barrier diode is highly sensitive to NIR light irradiation at zero voltage with good reproducibility, which is promising for the emergency application of fire detection and night vision. The high responsivity, detectivity, normalized photocurrent to dark current ratio (NPDR), noise equivalent power (NEP) and response time for illumination of light (~850 nm) are calculated to be 280 mA/W, 4.1 × 10 9 Jones, 3 × 10 7 W −1 , 9.1 × 10 −12 WHz −1/2 and 69 ms respectively. The obtained results suggested that p-GeSe is a novel candidate for SBD optoelectronics-based technologies. Two-dimensional (2D) materials have chronically been the most widely studied materials, particularly after the successful scotch tape test to exfoliate graphene by Andre Geim and Kostya Novoselov in 2004 1. 2D materials possess excellent electrical and mechanical properties toward diverse electronic device applications. Graphene, being the prototype of 2D materials 2,3 , has been studied broadly for its exotic electrical, optical, and mechanical properties 3,4. Besides, the group-IV transition metal dichalcogenides (TMDs) having a bandgap of around 1 to 2 eV 5-7 have attracted increasing interest because of their promising electronic and optoelectronic device applications 3,8-21. Graphene possesses extremely high carrier mobility (>10 5 cm 2 V −1 s −1), but the absence of band gap limits its electronic and optoelectronic applications 22. Therefore, TMDs with the properties of graphene-like stature, bandgap tunability, weak van der Waals-like forces and stability have intrigued the interest of the scientific community. TMDs are the family of 2D materials having the chemical composition of MX 2 , where M stands for the transition metal elements (M = Mo, W, Ta, Ge…etc) and X for the chalcogen elements (X = Se, S and Te). Among TMDs, Ge-based materials are preferred for applications due to their abundance on earth and environmentally friendly nature 23. With Se, the p-type Germanium from a narrow bandgap semiconductor material as p-GeSe having exciting application in near-infrared (NIR) photodetectors and electron tunnelling devices. p-GeSe has an indirect bandgap of 1.08 eV in the bulk 24,25 , and a direct bandgap of ~1.7 eV in monolayers 24,26,27. Few layers of p-GeSe can be obtained from bulk by mechanical exfoliation method 28. Among the many applications, p-GeSe shows tremendous capability in the realm of photovoltaics, because of its excellent optical, material and electrical properties. Therefore, it is well known as substitution of phosphorene 29. Moreover, GeSe is considered as an amb...

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Mixed-dimensional PdSe₂/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing

Abstract: A self-driven and broadband photodetector based on PdSe2/SiNWA mixed-dimensional vdW heterojunction is fabricated, which shows a broadband spectrum from 200 nm to 4.6 μm with a high polarization sensitivity and good mid-infrared imaging capability.

Cited by 165 publications

References 68 publications

Highly In‐Plane Anisotropic 2D PdSe₂ for Polarized Photodetection with Orientation Selectivity

Highly In‐Plane Anisotropic 2D PdSe₂ for Polarized Photodetection with Orientation Selectivity

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

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Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing

Abstract: A self-driven and broadband photodetector based on PdSe2/SiNWA mixed-dimensional vdW heterojunction is fabricated, which shows a broadband spectrum from 200 nm to 4.6 μm with a high polarization sensitivity and good mid-infrared imaging capability.

Cited by 165 publications

References 68 publications

Highly In‐Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity

Highly In‐Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Contact Info

Product

Resources

About

Mixed-dimensional PdSe₂/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing

Highly In‐Plane Anisotropic 2D PdSe₂ for Polarized Photodetection with Orientation Selectivity

Highly In‐Plane Anisotropic 2D PdSe₂ for Polarized Photodetection with Orientation Selectivity