Mixed-Dimensional InSe–Si Heterojunction Nanostructures for Self-Powered Broadband Photodetectors

Abstract

High-performance self-powered broadband photodetectors composed of mixed-dimensional (2D−3D) InSe−Si van der Waals heterojunctions (vdWHs) are demonstrated for the first time. Because of the suitable band structures, high electron mobility, and good light absorption of the individual 2D InSe and 3D Si, the 2D−3D vdWHs exhibit an excellent rectifying effect, a broad photoresponse region, high responsivity, good stability, and good optical imaging capability. The electrical and photoresponse performance is superior to that of most other 2D InSe-based vdWHs. The good electrical and photoresponse performance of 2D−3D InSe−Si vdWHs demonstrates their broad applicability in high-performance optoelectronic devices.

Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction

“…The specific detectivity ( D *) reflects the ability to detect weak light signal. For the UV–visible light detector, the D * is calculated by the following equation ,,− because the dominated noise of the devices is the shot noise. where I dark , A , and q are the dark current, effective area, and unit charge, respectively. The D * plotted in Figure d decreases with the increase of the laser power intensity.…”

Efficient Frequency Upconversion Photodetection in Heterojunction of InSe and Silicon Photonic Crystal Cavity

“…The SHG photons are then absorbed by InSe and Si generating photocarriers which are extracted by the InSe/Si pn junction. [ 39 ] Since the SHG process doubles the energy of incident photons, it could extend the detection wavelength of the InSe/Si‐PCC heterostructure from 1.2 to 2.2 µm, which corresponds to half of the bandgap of Si (1.12 eV).…”

Electrically Tunable Multiple‐Effects Synergistic and Boosted Photoelectric Performance in Te/WSe2 Mixed‐Dimensional Heterojunction Phototransistors

“…[ 2 ] Moreover, ultrafast photo‐generated carrier transfer and transport, and exciton dissociation are found in MDHJs PDs due to the interfacial effect. [ 3 ] Intelligent PDs exhibiting low energy consumption, broadband response, and polarized detection are thus demonstrated in MDHJs PDs. [ 3 ] Thanks to the strong absorption of HgCdTe (MCT) and the anisotropic property of black phosphorus (BP), [ 4 ] polarization‐sensitive mid‐wave infrared PDs are reported in BP/MCT MDHJs.…”

“…[ 3 ] Intelligent PDs exhibiting low energy consumption, broadband response, and polarized detection are thus demonstrated in MDHJs PDs. [ 3 ] Thanks to the strong absorption of HgCdTe (MCT) and the anisotropic property of black phosphorus (BP), [ 4 ] polarization‐sensitive mid‐wave infrared PDs are reported in BP/MCT MDHJs. Broadband Bi 2 Se 3 /GaN MDHJs PDs with an ultrahigh responsivity of 2.45 × 10 4 A W −1 are designed because of the fast electron transport in the surface of Bi 2 Se 3 and the large built‐in electric field.…”