Abstract:The roughness present on the sidewalls of lithographically defined patterns imposes a very important challenge for advanced technology nodes. It can originate from the aerial image or the photoresist chemistry/processing [1]. The latter remains to be the dominant group in ArF and KrF lithography; however, the roughness originating from the mask transferred to the aerial image is gaining more attention [2-9], especially for the imaging conditions with large mask error enhancement factor (MEEF) values. The mask … Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.