MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V T instability effect

“…The core MVSG model equations calculate the terminal current and non-linear device charges as a function of bias and temperatures as given in [20][21][22]. Figure 1(a) shows a crosssectional schematic representing a p-GaN gate HEMT under study.…”

“…The MIT virtual source GaN (MVSG) HEMT model is one of the compact model coalition (CMC) approved industry standard models for GaN HEMTs [20][21][22]. In our previous work, the MVSG model has been validated for a discrete component of p-GaN gate HEMTs as well as for the circuit block [23].…”

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

“…In order to fully comprehend the experimental characteristics of these devices and to harness their full potential in power-electronic circuit design, thorough understanding of their operation along with a guiding principle for optimal device design is of paramount importance, which necessitates the need to have a fully physics-based analytical compact model for DC-GaN-HEMTs. While several models have been reported for single-channel GaN-HEMTs which includes the state-of-the-art industry standard ASM-GaN-HEMT [12][13][14][15][16][17] and MVSG-GaN [18][19][20] models, only a handful of attempts have been made to model DC-GaN-HEMTs [21][22][23]. Wei et al proposed an analytical model for DC-GaN-HEMTs that only takes care of the electrostatics and as such is only validated against charge densities for both channels at multiple bias conditions [21].…”

Nanoscale material parameters based modeling of thermal noise in GaN HEMTs

“…Dasgupta et al [20,21] demonstrated a surface-potentialbased noise model for HEMT devices which has recently been accepted by the compact model coalition (CMC) as an industry-standard advanced simulation program with integrated circuit emphasis model [22]. Another model approved by CMC is the charge-based Massachusetts Institute of Technology virtual source (MVS) model [23], which was initially developed for Si-FETs and then extended for GaN HEMTs. Recently, another charge-based École polytechnique fédérale de Lausanne HEMT model that considered a linear approximation of channel charge as a function of the surface potential was proposed by Jazaeri et al [24,25].…”

“…Recently, another charge-based École polytechnique fédérale de Lausanne HEMT model that considered a linear approximation of channel charge as a function of the surface potential was proposed by Jazaeri et al [24,25]. However, none of the previously proposed models [22][23][24][25][26][27][28][29] considered the impact of nanoscale structural parameters on the intrinsic properties of a material such as its bandgap, permittivity, and melting temperature. It has already been demonstrated that the use of these nanoscale parameters predicts the electrical characteristics more accurately than the bulk properties [30].…”