Mist deposited high-k dielectrics for next generation MOS gates

Lee, D.-O; Roman, P.; Wu, C. T.; Mumbauer, P.; Brubaker, Matthew D.; Grant, R.; Rużyłło, Jerzy

doi:10.1016/s0038-1101(02)00163-6

Cited by 33 publications

(25 citation statements)

References 6 publications

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“…Reduction of SiO x thickness is clearly seen in the former case. The same effect was observed earlier in the case of SrTa 2 O 6 used as a high-k gate dielectric [1,6]. It was determined by means of XPS characterization that thickness of UV/NO grown oxide is 0.5 nm and nitrogen content is 2.3 at.%.…”

Section: High-k Gate Dielectric Processingsupporting

confidence: 78%

“…It includes three process modules: gas-phase surface preparation module, deposition module in which high-k dielectric is formed by mist deposition method (e.g. [1]) and rapid thermal processing (RTP) module in which films are subjected to post-deposition anneal.…”

Section: Methodsmentioning

confidence: 99%

“…The study is focused on the surface conditioning prior mist deposition of ultra-thin films of HfSiO 4 as well as processing of walls in the trenches etched in Si substrate in the course of power UMOSFET fabrication. The former is a continuation of the studies of mistdeposited high-k dielectrics for MOS gates [1] while the latter builds on the series of earlier experiments on MOS gate fabrication in a trench etched in silicon [2].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silicon surface treatments in advanced MOS gate processing

Chang

Karthikeyan

Lee³

et al. 2004

Microelectronic Engineering

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Section: High-k Gate Dielectric Processingsupporting

confidence: 78%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Silicon surface treatments in advanced MOS gate processing

Chang

Karthikeyan

Lee³

et al. 2004

Microelectronic Engineering

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“…The mist deposition process has been used for other LED appli− cations already such as blue OLED technology, and proven its ability to create high brightness LEDs [12]. It was also successfully used to deposit ultra−thin QDs of QDs, which is crucial for QD−LEDs since brightness of the QD layer exhibits a critical dependence on film thickness [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Patterned mist deposition of tri-colour CdSe/ZnS quantum dot films toward RGB LED devices

Pickering

Kshirsagar

Rużyłło

et al. 2012

Opto-Electronics Review

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In this experiment a technique of mist deposition was explored as a way to form patterned ultra-thin-films of CdSe/ZnS core/shell nanocrystalline quantum dots using colloidal solutions. The objective of this study was to investigate the feasibility of mist deposition as a patterning method for creating multicolour quantum dot light emitting diodes. Mist deposition was used to create three rows of quantum dot light emitting diodes on a single device with each row having a separate colour. The colours chosen were red, green and yellow with corresponding peak wavelengths of 620 nm, 558 nm, and 587 nm. The results obtained from this experiment show that it is possible to create multicolour devices on a single substrate. The peak brightnesses obtained in this experiment for the red, green, and yellow were 508 cd/m, 507 cd/m, and 665 cd/m, respectively. The similar LED brightness is important in display technologies using colloidal quantum dots in a precursor solution to ensure one colour does not dominate the emitted spectrum. Results obtained in-terms of brightness were superior to those achieved with inkjet deposition. This study has shown that mist deposition is a viable method for patterned deposition applied to quantum dot light emitting diode display technologies.

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“…As is common for complex oxides containing d 0 tantalum, niobium, or titanium, the above Sr m Ta 2n O m þ 5n compounds have been popular choices for exploring photocatalysts or dielectrics [2][3][4][5][6][7]. One particular member, SrTa 2 O 6 , is known to form in three polymorphs designated as a-, b-, and b 0 -phases [8,9], whereas the formation of a metastable defect perovskite Sr 1/2 TaO 3 [10] has been also reported.…”

Section: Introductionmentioning

confidence: 99%