Misfit Stress Relaxation in α-Ga2O3/α-Al2O3 Heterostructures via Formation of Misfit Dislocations

Смирнов, А. М.; Kremleva, A. V.; Sharofidinov, Sh. Sh.; Bugrov, V. E.; Романов, А. Е.

doi:10.1134/s1063783421060214

Cited by 3 publications

(2 citation statements)

References 32 publications

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“…where t is the thickness of the (AlGa) 2 O 3 epilayer. 33,34) For the anisotropic crystal structure, E d per unit length of the dislocation line is given by ). 36) The dominant slip system of α-Al 2 O 3 is the basal-plane 〈112 ¯0〉(0001).…”

Section: Methodsmentioning

confidence: 99%

Pseudomorphic growth of Si-doped α-(AlGa)₂O₃ on m-plane α-Al₂O₃ substrates by molecular beam epitaxy

Okumura¹

2023

Jpn. J. Appl. Phys.

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α-(AlGa)2O3 is an attractive material for high-power devices and vacuum UV optoelectronics. However, α-(AlGa)2O3 on sapphire substrates suffers from lattice relaxation and phase transformation. Here, we investigated the effect of controlling the Al composition and thickness of Si-doped α-(AlGa)2O3 layers pseudomorphically grown on α-Al2O3 (10 1 ¯ 0) substrates by MBE. We found that the critical layer thicknesses of α-(AlGa)2O3 layers with Al compositions of 58%, 66%, and 79% were around 13, 18, and 44 nm, respectively. We also found that a 9.0 nm thick α-(Al0.65Ga0.35)2O3/3.5 nm thick Al2O3 multilayer with 20 periods grew almost pseudomorphically and formed α-(Al0.90Ga0.10)2O3 alloy after post-thermal annealing at 1400 °C.

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Section: Methodsmentioning

confidence: 99%

Pseudomorphic growth of Si-doped α-(AlGa)₂O₃ on m-plane α-Al₂O₃ substrates by molecular beam epitaxy

Okumura¹

2023

Jpn. J. Appl. Phys.

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“…Similarly to the approach described in Refs. [20][21][22][23][24][25], we consider a film/substrate κ-Ga2O3/Al2O3 heterostructure with thin film and MDs formed at the interface (Fig. 1).…”

Section: Modelmentioning

confidence: 99%

Stress Relaxation Due to Dislocation Formation in Orthorhombic Ga2O3 Films Grown on Al2O3 Substrates

Smirnov¹,

Ivanov²,

Kremleva³

et al. 2022

Rev. Adv. Mater. Technol.

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We analyze the preference of various types of misfit dislocation (MD) formation in film/substrate κ-Ga2O3/α-Al2O3 and κ (AlxGa1–x)2O3/κ-Al2O3 heterostructures. We consider two possibilities for variation in films growth orientation (defined by inclination angle ϑ) for these heterostructures with inclination axes about either [100] or [010] crystallographic directions. We study dependences of the critical film thickness for MD formation on the inclination angle ϑ for heterostructures under consideration. We find the presence of two special orientations (ϑ ~ 26° for [100] heterostructure, ϑ ~ 28° for [010] heterostructure, and ϑ = 90° for both inclination types) of κ-Ga2O3/α-Al2O3 heterostructures, for which the formation of MDs is energetically unfavorable. We show that formation of pure edge MDs is easier for [010] κ-(AlxGa1–x)2O3/κ-Al2O3 heterostructures than for [100] heterostructures, and it is vice versa for mixed MDs in these heterostructures.

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Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure

Смирнов

Kremleva

Sharofidinov

et al. 2022

Journal of Applied Physics

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In this work, we consider film/substrate semiconductor heterostructures with a hexagonal (wurtzite) and trigonal (corundum) crystal structure. We show that the differences between the stress level in the α-Ga2O3/α-Al2O3 heterostructure with the corundum crystal structure and the stress level in the GaN/AlN heterostructure with the wurtzite crystal structure do not exceed 50%. We study the effect of Al composition x and growth direction of the heterostructure on the critical film thickness for misfit dislocation formation in α-(AlxGa1−x)2O3/α-Al2O3 heterostructures. We provide a comparison between theoretical calculations of the critical film thickness and experimental data on the film thickness, at which the misfit dislocations were observed in α-(AlxGa1−x)2O3/α-Al2O3 heterostructures.

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Misfit Stress Relaxation in α-Ga2O3/α-Al2O3 Heterostructures via Formation of Misfit Dislocations

Cited by 3 publications

References 32 publications

Pseudomorphic growth of Si-doped α-(AlGa)₂O₃ on m-plane α-Al₂O₃ substrates by molecular beam epitaxy

Pseudomorphic growth of Si-doped α-(AlGa)₂O₃ on m-plane α-Al₂O₃ substrates by molecular beam epitaxy

Stress Relaxation Due to Dislocation Formation in Orthorhombic Ga2O3 Films Grown on Al2O3 Substrates

Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure

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Misfit Stress Relaxation in α-Ga2O3/α-Al2O3 Heterostructures via Formation of Misfit Dislocations

Cited by 3 publications

References 32 publications

Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy

Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy

Stress Relaxation Due to Dislocation Formation in Orthorhombic Ga2O3 Films Grown on Al2O3 Substrates

Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure

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Pseudomorphic growth of Si-doped α-(AlGa)₂O₃ on m-plane α-Al₂O₃ substrates by molecular beam epitaxy

Pseudomorphic growth of Si-doped α-(AlGa)₂O₃ on m-plane α-Al₂O₃ substrates by molecular beam epitaxy