1991
DOI: 10.1080/10408439108243751
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Misfit dislocation generation in epitaxial layers

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Cited by 110 publications
(50 citation statements)
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“…Recently, there has been much interest [1][2][3][4][5][6][7][8][9][10][11][12][13][14] in growth of epitaxial metal films and superlattices due to their unusual physical properties. The quality and structure of these systems is of paramount importance for applications.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, there has been much interest [1][2][3][4][5][6][7][8][9][10][11][12][13][14] in growth of epitaxial metal films and superlattices due to their unusual physical properties. The quality and structure of these systems is of paramount importance for applications.…”
Section: Introductionmentioning
confidence: 99%
“…The difference discussed here between real and model systems is standard in the theory of defects in heteroepitaxial systems. For example, the formation of MDs at film/substrate boundaries in conventional heteroepitaxial systems depends on many factors (relief of the film free surface, distribution of pre-existent dislocations in a substrate, etc) which are not taken into account in theoretical models that commonly deal with the averaged and technologically controlled characteristics (the mean film thickness and misfit parameter) of heteroepitaxial systems; see, e.g., the reviews [7,9,21]. Although the theoretical model suggested in this paper does not take into consideration the disorder in spatial arrangement of deformation-induced sub-boundaries, its results allow one to estimate in the first approximation the influence of pre-deformation of substrates on the formation of MDs in multilayered films deposited onto the deformed substrates.…”
Section: Discussion and Concluding Remarksmentioning
confidence: 99%
“…In particular, all the derivations of this paper rely on isotropic elasticity, whereas real systems are in many cases elastically anisotropic. The assumption of isotropic elasticity is conventional in the theory of MDs in heteroepitaxial systems; see, e.g., the reviews [7,9,21]. A theoretical description of defects in heteroepitaxial systems which accounts for anisotropic effects (e.g., [18]) gives rise to inessential (about 10%) corrections of isotropic-theory-based estimates of the critical thickness.…”
Section: Formation Of Disclinations In Plastically Deformed Substratesmentioning
confidence: 99%
“…The dilatation misfit at crystal-glass interfaces is similar to that at conventional crystal-crystal interfaces. Therefore, it is effectively described in terms of the dilatation misfit parameter and associated dilatation misfit stresses and misfit dislocations; see, e.g., reviews [21][22][23]. Since a description of the dilatation misfit is a standard procedure, here and in the following we will focus our consideration on a description of only the orientational misfit and associated misfit disclinations at crystal-glass interfaces.…”
Section: Structural Geometry Of Crystal-glass Interfaces Misfit Discmentioning
confidence: 99%