Mise en évidence d'une solution solide de type spinelle dans le diagramme de phase du systeme InS

Likforman, A.; Guittard, M.; Tomas, Α.; Flahaut, Jean

doi:10.1016/0022-4596(80)90434-x

Cited by 41 publications

(27 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…3) that in the range of compositions from InS to InS a continuous row of solid solutions exists with a linear dependence of lattice parameter on the S content. Comparing the lattice parameter a "5(3d for our samples 1, 2, and 4-6 with the lattice parameter in (14), one may conclude that the S content corresponds to 0.60. This fact verifies that stoichiometric indium sulfide was prepared in our experiments.…”

Section: Resultsmentioning

confidence: 91%

“…However, for sample 3, deposited at 230°C and then annealed at 430°C, the d value turns out to be significantly higher. (10,14) that the lattice parameter a for the cubic (or c (c"3a ) for the tetragonal) modification of In S increases with an increase in the sulfur content of the sample. According to this observation, it is possible to assume that for samples deposited at 430°C the sulfur content is higher.…”

Section: Resultsmentioning

confidence: 97%

See 1 more Smart Citation

Study of In2S3Thin Films by Diffraction of Synchrotron Radiation

Bessergenev

Иванова

et al. 1998

Journal of Solid State Chemistry

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 97%

Study of In2S3Thin Films by Diffraction of Synchrotron Radiation

Bessergenev

Иванова

et al. 1998

Journal of Solid State Chemistry

View full text Add to dashboard Cite

“…The compounds existing in the In-S system (Fig. 12) (InS, In 6 S 7 , and In 2 S 3 ) are low-volatile [49][50][51][52][53][54] (p < 10 Pa at their melting points).…”

Section: Theoretical Analysismentioning

confidence: 99%

Chemical vapor transport as a means of controlling the composition of condensed phases

et al. 2004

View full text Add to dashboard Cite

A new method is proposed for controlling the composition (nonstoichiometry) of low-volatile inorganic compounds. The basic principle of the method is the introduction (or removal) of one of the components into the low-volatile compound using reversible selective chemical vapor transport (CVT). Theoretical analysis is used to identify the process parameters determining the direction of mass transport: source temperature T 1 , source composition x 1 , and sample temperature T 2 . Using nonequilibrium thermodynamics concepts, steadystate conditions are found under which mass transport ceases. A new type of phase diagram, x 2 -T 1 -T 2 , is proposed, which describes the state of CVT systems under steady-state conditions without mass transport. The CVT process is used to prepare GaSe crystals with different deviations from stoichiometry. The crystals are characterized using x-ray diffraction and cathodoluminescence spectroscopy. The stability regions of two GaSe polytypes in the T -x phase diagram are located. CVT is used to control the compositions of phases in the In-S system. The advantages of the CVT method are analyzed with application to control over the composition of inorganic compounds. S102 INORGANIC MATERIALS Vol. 40 Suppl. 2 2004 ZAVRAZHNOV et al .

show abstract

“…Cet environnement de rindium est classique dans les sulfures. L'indium occupe 6galement partiellement le site 16(d) comme dans plusieurs autres composrs spinelles In2S3fl et InSl,44 (Likforman, Guittard, Tomas & Flahaut, 1980). L'ytterbium se rrpartit sur deux sites octardriques, le site 16(c) et le site 16(d) qu'il partage en drsordre statistique avec l'indium.…”

Section: Commentaireunclassified