MIS and P/N Junction Solar Cells on Thin-Film Polycrystalline Silicon

Abstract

Theoretically, MIS-type solar cells offer potential advantages over p/n junctions on thin-film polycrystalline silicon substrates. The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a compsrat ive study to assess the potential of these cells for low-cost terrestrial photovoltaic systems in tems of performance, stability, and costeffectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon aaterials. All cell ~essurements and characterizations lre performed using uniform testing procedures developed in the Photovolta1c Measurements and Evaluation (PV M&E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgicalgrade substrates are presented here. I.