Minority-carrier lifetime in ITO/InP heterojunctions

Ahrenkiel, R. K.; Dunlavy, D. J.; Hanak, Thomas R.

doi:10.1063/1.341743

Cited by 29 publications

(6 citation statements)

References 8 publications

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“…Nevertheless, a value of 2.0 × 10 –10 cm 3 /sec is attained, which has never been reported experimentally for WZ-phased InP before. The fact that this is within the realm of the state-of-the-art numbers reported for ZB-phased InP bulk , manifests the excellent emission efficiency of our InP micropillars. The high light extraction efficiency owes to the hexagonal pyramid shape, which is irregular enough so that photons not initially emitted into the escape cone have a higher chance of escaping after several internal reflections inside the pillar structure.…”

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confidence: 58%

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Tran

et al. 2015

Nano Lett.

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The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

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supporting

confidence: 58%

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Tran

et al. 2015

Nano Lett.

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“…Photoluminescence decay was observed by the time-correlated, single photon counting technique described previously [37,38]. The exciting source was a Spectra Physics 375B cavity-dumped dye laser pumped by a frequencydoubled, Spectra Physics 3400 Nd3+:YAG laser.…”

Section: Film Growth Methods and Measurement Techniquesmentioning

confidence: 99%

New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992

Lundstrom¹,

Melloch²,

Lush³

et al. 1993

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“…The 10 ps (full-width at half maximum) pulses produce photoluminescence which is detected with an S-1 photomultiplier tube. The entire system has been described in detail elsewhere (5). The devices to be measured were mounted on the cold finger of a variable temperature cryostat.…”

Section: Minority Carrier Lifetimementioning

confidence: 99%

“…For a doped, n-type semiconductor, the radiative lifetime is given as "rR = 1/(B ND) [5] where ND is the donor density per cm ~. The SRH or nonradiative process ( 12) is electron-hole recombination at bulk defects.…”

Section: Minority Carrier Lifetimementioning

confidence: 99%

Minority Carrier Lifetime of GaAs on Silicon

Ahrenkiel

Al‐Jassim

Keyes

et al. 1990

J. Electrochem. Soc.

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The lifetime of minority carrier~ in GaAs grown heteroepitaxially on silicon is reduced two to three orders of magnitude by recombination at mismatch dislocations. Here we fabricated isotype double heterostructures for minority carrier lifetime diagnostics and transmission electron microscopy (TEM). The diagnostic structures were fabricated on strain reduction layers composed of annealed buffer layers and strained layers. Transmission electron microscopy (TEM) shows that an annealed buffer layer reduces the dislocation density over two orders of magnitude. The minority carrier lifetime in these double heterostructures is increased more than a factor of twenty. The minority carrier lifetime vs. dislocation density was described quite well by the model of Yamaguchi and co-workers.

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Minority-carrier lifetime in ITO/InP heterojunctions

Cited by 29 publications

References 8 publications

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992

Minority Carrier Lifetime of GaAs on Silicon

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