Minority carrier lifetime enhancement in multicrystalline silicon by means of a dual treatment based on porous silicon and sputter-deposition of TiO2:Cr passivation layers

Hajjaji, A.; Rabha, M. Ben; Janene, N.; Gaidi, Mounir; Bessaı̈s, B.; Khakani, My Alì El

doi:10.1016/j.apsusc.2012.04.169

Cited by 8 publications

(12 citation statements)

References 21 publications

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“…AFM images show that incorporation of chromium induces a textural modification of the film (Figure 2 ). In a previous work, X-ray photoelectron spectroscopy [ 16 ] showed that the concentrations of CrO 2 and Cr 2 O 3 compounds increase with Cr content; it is obvious that for Cr concentration as high as 17 at. %, Cr exists in the TiO 2 lattice as well in the form of CrO 2 and Cr 2 O 3 compounds.…”

Section: Resultsmentioning

confidence: 99%

“…Pure TiO 2 and TiO 2 :Cr thin films were deposited by means of radio frequency (RF) magnetron co-sputtering (13.56 MHz) technique on the PS/mc-Si substrates. Technical details of the co-sputtering deposition conditions were reported elsewhere [ 16 ]. The TiO 2 target was submitted to an RF power of 360 W, while the Cr element target was sputtered with variable power values ( P cr ) ranging from 8 to 150 W. The Cr content in the TiO 2 :Cr films increases with P cr and can be adjusted, at will, from 2 to 17 at.…”

Section: Methodsmentioning

confidence: 99%

“…The TiO 2 target was submitted to an RF power of 360 W, while the Cr element target was sputtered with variable power values ( P cr ) ranging from 8 to 150 W. The Cr content in the TiO 2 :Cr films increases with P cr and can be adjusted, at will, from 2 to 17 at. % Cr [ 16 ]. The TiO 2 :Cr films were deposited at approximately 550°C, with a thickness of about 120 nm.…”

Section: Methodsmentioning

confidence: 99%

“…Cr doping was widely used to enhance light absorption of TiO 2 in the visible light. However, it was observed that at a certain Cr doping level, an anatase-to-rutile structural transition [ 16 ] occurs, leading to a degradation of the photocatalytic activity of the material. In this work, Cr-doped TiO 2 films were prepared using the co-sputtering deposition technique.…”

Section: Introductionmentioning

confidence: 99%

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Photocatalytic activity of Cr-doped TiO2 nanoparticles deposited on porous multicrystalline silicon films

et al. 2014

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This work deals with the deposition of Cr-doped TiO2 thin films on porous silicon (PS) prepared from electrochemical anodization of multicrystalline (mc-Si) Si wafers. The effect of Cr doping on the properties of the TiO2-Cr/PS/Si samples has been investigated by means of X-ray diffraction (XRD), atomic force microcopy (AFM), photoluminescence, lifetime, and laser beam-induced current (LBIC) measurements. The photocatalytic activity is carried out on TiO2-Cr/PS/Si samples. It was found that the TiO2-Cr/PS/mc-Si type structure degrades an organic pollutant (amido black) under ultraviolet (UV) light. A noticeable degradation of the pollutant is obtained for a Cr doping of 2 at. %. This result is discussed in light of LBIC and photoluminescence measurements.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photocatalytic activity of Cr-doped TiO2 nanoparticles deposited on porous multicrystalline silicon films

et al. 2014

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“…PS has been prepared using the simple and versatile technique of stain etching. Titanium dioxide films have been prepared by pulsed laser deposition (PLD) [8], which seems to be the most suitable technique to produce excellent thin films quality and to preserve the stoichiometry of the targets.…”

Section: Introductionmentioning

confidence: 99%

TiO2/porous silicon nanocomposite passivation coating for mc-Si wafers

Janene

Salem

Rabha

et al. 2014

J Mater Sci: Mater Electron

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This work reports on passivation effect of solar-grade multicrystalline Si (mc-Si) using a TiO 2 /porous silicon double coating. For this purpose, TiO 2 nanoparticles were deposited onto porous silicon (PS)/mc-Si using pulsed laser ablation of titanium target. The structural and optoelectronic properties of the TiO 2 /PS treated mc-Si substrates were investigated by X-ray diffraction, Raman spectroscopy, optical spectrometry, photo-conductance and photoluminescence (PL). It was found that the minority carrier lifetime (s eff ) of the mc-Si wafer could enhance at a nominal thickness of the TiO 2 film (nanoparticle sizes). This was attributed to a surface passivation of the mc-Si wafer via TiO 2 -passivation of the PS film, whose PL intensity improves consequently. An optimal TiO 2 thickness of 80 nm was found to give the highest PL intensity and an enhancement of the minority carrier lifetime from 5 ls for untreated mc-Si wafer to about 391 ls for a TiO 2 / PS treated wafers.

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